This paper presents comparison of two photoacoustic modes of determination of optical absorption spectra of semiconductors illustrated with the results obtained for SiGe crystals. Experimental transmission and absorption photoacoustic spectra of SiGe crystals as well as appropriate models for determination of optical absorption coefficient spectra are given. The idea and experimental set-up of the analyzed methods are presented too. From the fitting procedure of theoretical characteristics to experimental transmission and absorption photoacoustic spectra and after computations of the optical absorption coefficient spectra, three components of the optical absorption coefficient spectra of SiGe crystals were identified, i.e., band to band transitions, Urbach tail and free carriers absorption. Their parameters are given and discussed in the paper. At the end, the advantages and disadvantages of both methods are discussed. To the best of our knowledge, such a comparison of the two PA methods of determination of the optical absorption spectra has not been done before.
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The paper presents results of photoacoustic studies of thermal and transport properties of silicon samples. It shows for the first time the influence of plasma waves on the Sf/Sr and phase-lag frequency photoacoustic characteristics and describes a procedure leading to the determination of both thermal diffusivity and the life time or the diffusion length of excess carriers from those characteristics.
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