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1

Semiconductor detectors and focal plane arrays for far-infrared imaging

Rogalski A.

Opto-Electronics Review

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2013

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Vol. 21, No. 4

406-426

EN

The detection of far-infrared (far-IR) and sub-mm-wave radiation is resistant to the commonly employed techniques in the neighbouring microwave and IR frequency bands. In this wavelength detection range the use of solid state detectors has been hampered for the reasons of transit time of charge carriers being larger than the time of one oscillation period of radiation. Also the energy of radiation quanta is substantially smaller than the thermal energy at room temperature and even liquid nitrogen temperature. The realization of terahertz (THz) emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. Development of semiconductor focal plane arrays started in seventies last century and has revolutionized imaging systems in the next decades. This paper presents progress in far-IR and sub-mm-wave semiconductor detector technology of focal plane arrays during the past twenty years. Special attention is given on recent progress in the detector technologies for real-time uncooled THz focal plane arrays such as Schottky barrier arrays, field-effect transistor detectors, and microbolometers. Also cryogenically cooled silicon and germanium extrinsic photoconductor arrays, and semiconductor bolometer arrays are considered.

2

Terahertz detectors and focal plane arrays

Rogalski A., Sizov F.

Opto-Electronics Review

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2011

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Vol. 19, No. 3

346-404

EN

Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands. In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

3

THz radiation sensors

Sizov F.

Opto-Electronics Review

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2010

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Vol. 18, No. 1

10-36

EN

In the paper, issues associated with the development and exploitation of terahertz (THz) radiation detectors are discussed. The paper is written for those readers who desire an analysis of the latest developments in different type of THz radiation sensors (detectors), which play an increasing role in different areas of human activity (e.g., security, biological, drugs and explosions detection, imaging, astronomy applications, etc.). The basic physical phenomena and the recent progress in both direct and heterodyne detectors are discussed. More details concern Schottky barrier diodes, pair braking detectors, hot electron mixers, and field-effect transistor detectors. Also the operational conditions of THz detectors and their upper performance limits are discussed.

4

Terahertz detectors and focal plane arrays

Rogalski A.

Elektronika : konstrukcje, technologie, zastosowania

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2010

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Vol. 51, nr 4

93-108

EN

Terahertz (THz) detectors play increasing role in different areas of human activities (e.g., security, biological, drugs and explosions detection, imaging, astronomy applications, etc.). In the paper, issues associated with the development and exploitation of THz radiation detectors is discussed. The basic physical phenomena and the recent progress in both direct and heterodyne detectors are described. More details concerning Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachiningare underlined. Also the operational conditions of THz detectors and their upper performance limits are reviewed.

PL

Znaczenie detektorów terahertzowych wzrasta w różnych obszarach aktywności człowieka (dla przykładu: w ochronie obiektów i ludzi; w detekcji środków biologicznych, narkotyków, odczynników trujących, środków wybuchowych zobrazowaniu, w zastosowaniach astronomicznych, etc.). W pracy przedstawiono sposób działania i postęp technologiczny w rozwoju różnych typów detektorów terahertzowych zarówno w detekcji bezpośredniej jak i heterodynowej. Więcej uwagi poświęcono detektorom z barierami Schottky'ego, detektorom nadprzewodzącym i detektorom wykorzystującym tranzystory polowe, których rozwój uwarunkowany jest postępem w technologii mikromechaniki półprzewodnikowej.