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EN
The degradation of photovoltaic modules and their subsequent loss of performance has a serious impact on the total energy generation potential. The lack of real-time information on the output power leads to additional losses since the panels may not be operating at their optimal point. To understand the behaviour, numerically simulate the characteristics and identify the optimal operating point of a photovoltaic cell, the parameters of an equivalent electrical circuit must first be identified. The aim of this work is to develop a total least-squares based algorithm which can identify those parameters from the output voltage and current measurements, taking into consideration the uncertainties on both measured quantities. This work presents a comparative study of the Ordinary Least Squares (OLS) and Total Least Squares (TLS) approaches to the estimation of the parameters of a photovoltaic cell.
2
Content available remote Solar cell parameters extraction optimization using Lambert function
EN
Solar cells are characterized by internal electrical parameters not displayed by the manufacturer. Their identification is necessary because it allows the photovoltaic system simulation and optimization. Currently, the new and simple extraction methods development is a challenge for researchers. In this work, a new approach is presented for exact determination the single-diode model multi-crystalline silicon cell five parameters. Our method consists in calculating the parameters from the ideality factor estimation using the Lambert function and the parasitic resistances curve (series and shunt). Absolute and relative errors are also calculated to show the proposed method importance over another method.
PL
W artykule zaprezentowano mtodę opisu matematycznego obwodu fotowoltaicznego. Metoda polega na opisie parametrów z wykorzystaniem funkcji Lamberta. . Określono błąd przybliżenia tego modelu matematycznego.
EN
An approach is proposed in the present paper to parameter extraction of geometry dependent RF planar spiral inductor model. A direct extraction procedure is developed and realized in the Cadence PSpice and Cadence Probe environment based on the measured two-port S-parameters. To minimize the error for the full range of operation a Genetic Algorithm (GA) optimization procedure is applied in MATLAB environment. The approach is useful in RF model design, as the S-parameters can be easily measured for a given microelectronic technology. The proposed model extraction approach is characterized by a very good accuracy.
EN
The first part of this article presents the modeling of the long-channel bulk MOSFET as a particular case of the SOI MOSFET. The second part reviews compares and scrutinizes various methods to extract the threshold voltage, the effective channel and the individual values of drain and source resistances. These are important device parameters for modeling and circuit simulation.
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