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First-principle study on the effect of S/Se/Te doping and VZn-Hi coexistence on ZnO electrical conductivity

Gu Yulan, Hou Qingyu, Qi Mude, Yin Xiang, Wang Zhichao

Materials Science Poland

2022

Vol. 40, No. 4

54--63

In a vacuum environment, when ZnO is prepared using the chemical vapor deposition method and the molecular beam epitaxial growth method, H-gap impurities inevitably remain in the ZnO system, which is often ignored. The study of Zn vacancies under experimental conditions poses a challenge. Second, as an n-type semiconductor, ZnO is characterized by a self-compensation of natural donor defects and poor stability, which severely limit the acquisition of p-type ZnO. Based on the above problems, the conductive properties of S/Se/Te doped and VZn-Hi coexisting ZnO were investigated by first principle to acquire high-stability and high-quality p-ZnO. The study found that Zn35SO35, Zn35SeO35, and Zn35SHiO35 all have good p-type conductivity, which can effectively improve hole mobility and electrical conductivity. Among them, Zn35SO35 has the largest hole concentration at 2.80×1021 cm−3, as well as the best conductivity. The choice of Zn35SO35 provides a reference for obtaining new high-quality p-type ZnO semiconductors.

Codoping of wide gap epitaxial III-Nitride semiconductors

Korotkov R. Y., Gregie J. M., Wessels B. W.

Opto-Electronics Review

2002

Vol. 10, No. 4

243-249

Codoping in p-type, epitaxial GaN grown by metal-organic vapour phase epitaxy (MOVPE) was investigated. An enhancement of hole concentration was observed experimentally in p-type GaN:Mg codoped with oxygen donors. The hole concentration of GaN:Mg codoped with oxygen increased super-linearly from 8x10¹⁶ to 2x10¹⁸ cm⁻³ upon increasing the oxygen dopant partial pressure. A factor of 3-5 enhancement of hole concentration was measured for a fixed oxygen partial pressure during the growth of p-type GaN:Mg. However, when Si was codoped with GaN:Mg, the hole concentration remained constant. Current experimental results are compared with the existing theory of codoping in GaN.