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1 2001

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Relationship between deep levels and R₀A product in HgCdTe diodes

Singh S. K., Gopal V., Mehra R. M.

Opto-Electronics Review

2001

Vol. 9, No. 4

385-390

This paper presents an analysis of the recently reported data of Yoshino et. al. [1,2] on p+ -n HgCdTe diodes with a view to verify quantitatively the previously reported relationship between deep levels and R₀A product of the diodes. The result of this analysis suggests that the trap level, located below 6 meV from the bottom of the conduction band edge, contributes to the trap assisted tunnelling currents in the medium reverse bias region. also there is evidence that zero bias resistance aera product is limited by the ohmic surface leakage and generation-recombination contributions. The observed current-voltage (I-V) characteristic and dynamic resistance-voltage (Rd-V) characteristics have been shown to excellently fit the theory by taking into account the contributions due to: (i) thermal diffusion of minority carrier from the neutral regions, (II) generation-recombination (g-r) current in the depletion region, (III) assisted tunnelling (TAT) currents due to a trap level located at 6 meV below the bottom of the conduction band edge, (iv) band to band tunnelling (BTB) currents, and (v) ohmic component of surface leakage currents. Though the R₀A product of the diodes is shown to be limited by g-r and surface concentrations, the variation in R₀A product of the diodes is interpreted as arsing due to the variation in planar area of the diodes accompanied with the varying surface contributions, since g-r contribution should remain constant for all diodes.