In this topic review the results of the X-band electron paramagnetic resonance (EPR) measurements of Mn, Co, Cr, Fe ions in YAlO₃ (YAP) crystals and Fe ions in LiNbO₃ (LNO) crystals and of chromium doped Bi₁₂GeO₂₀ (BGO) and Ca₄GdO(BO₃)₃ single crystals, are presented. It is well known that the oxide crystals (for example:YAP, LNO, BGO) are one of the most widely used host materials for different optoelectronic applications. The nature of point defect of impurities and produced in the oxide crystal after irradiation by bismuth ions and after irradiation by the ²³⁵U ions with energy 9.47 MeV/u and fluency 5 × 10¹¹ cm⁻¹ is discussed. The latter is important for applications of these oxide crystal as laser materials.
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The present work is devoted to the calculation of the radiation displacement defects (RDD) concentration in complex oxide crystals (Y3Al5O12, Gd3Ga5O12, YAlO3, LiNbO3) as a function of particle energy (electrons and neutrons). Energy dependencies of RDD concentration are discussed. The results of calculations show that the concentrations of RDD reduced to one impinging particle increased initially with the particles energy and they saturates for the electron and neutron energy above 25 MeV. The comparison of the concentrations of RDD calculated for different sub-lattices as well as for the cases of electrons and neutrons is made. The obtained results are compared with the experimental data.
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Recently, certain materials have attracted attention for a new generation of high speed, efficient, multi-functional optical devices. Among these materials, small-diameter and long-length bulk crystals are of considerable interest for miniaturization and high efficiency. In particular, rod or fiber-like micro-single crystals have already received attention as attractive materials for a variety of electro-optical application, such as second harmonic generation (SHG), micro-laser sources or optical memory arrangements because of their extended interaction length and high optical intensity.
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