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Investigations of CrN/TiO2 coatings obtained in a hybrid PVD/ALD method on Al-Si-Cu alloy substrate

Staszuk Marcin

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2023

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Vol. 71, nr 2

art. no. e144622

EN

The paper addresses an important scientific topic from the utilitarian point of view concerning the surface treatment of Al-Si-Cu aluminum alloys by PVD/ALD hybrid coating deposition. The influence of the conditions of deposition of titanium oxide in CrN/TiO2 coatings on their structure and properties, in particular corrosion resistance, were investigated. The TiO2 layer was produced by the atomic layer deposition (ALD) method with a variable number of cycles. Structural investigations were performed using scanning and transmission electron microscopy (SEM and TEM), atomic force microscopy (AFM), and Raman spectroscopy methods. Electrochemical properties were analyzed using potentiodynamic and electrochemical impedance spectroscopy (EIS) methods. The CrN/TiO2 hybrid coating with titanium oxide deposited at 500 ALD cycles showed the best corrosion properties. It was also found that the prerequisite for obtaining the best electrochemical properties was the amorphous structure of titanium oxide in the tested hybrid coatings. The high tribological properties of the tested coatings were also confirmed.

2

Metody badawcze cienkich warstw wytworzonych metodą osadzania warstw atomowych

Boryło Paulina, Szindler Marek, Szindler Magdalena, Lukaszkowicz Krzysztof

LAB Laboratoria, Aparatura, Badania

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2019

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R. 24, nr 5

16--18

3

Nanometryczne warstwy tlenku cynku wytwarzane metodami próżniowymi

Boryło Paulina, Lukaszkowicz Krzysztof

Elektronika : konstrukcje, technologie, zastosowania

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2019

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Vol. 60, nr 9

6--10

PL

Celem artykułu jest porównanie wpływu metody wytwarzania oraz temperatury procesu na własności cienkich warstw tlenku cynku. Zbadano strukturę, morfologię i topografię wytworzonych warstw oraz ich własności optyczne i elektryczne. Badane warstwy ZnO zostały wytworzone w procesie rozpylania magnetronowego oraz osadzania warstw atomowych. Przeprowadzone badania wykazały wpływ metody wytwarzania oraz temperatury procesu na analizowane własności.

EN

The aim of this article is to compare the influence of prepation methods and process temperature on the production effects and properties of zinc oxide thin films. Coducted experiments included investigations of structure, morphology and topography of deposited thin films as well as their optical and electrical properties. Tested ZnO thin films were prepared by magnetron sputtering and atomic layer deposition metods. Results of studies have shown that impact of the manufacturing method and process temperature on the analyzed properties is significant.

4

Struktura i własności warstw Al₂O₃ osadzonych metodą ALD na krzemowych ogniwach fotowoltaicznych

Szindler M., Szindler M.

Elektronika : konstrukcje, technologie, zastosowania

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2018

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Vol. 59, nr 9

9--11

PL

W pracy zbadano możliwości zminimalizowania współczynnika odbicia światła, a w konsekwencji zwiększenia sprawności wytwarzanych krzemowych ogniw fotowoltaicznych, poprzez wytworzenie cienkiej warstwy antyrefleksyjnej Al₂O₃ metodą atomowego osadzania warstw. Badania morfologii powierzchni warstw wykonano przy użyciu skaningowego mikroskopu elektronowego, z kolei strukturę zbadano przy użyciu dyfraktometru rentgenowskiego. W celu okreslenia własności optycznych cienkich warstw Al₂O₃ wykonano badania współczynnika odbicia światła przy użyciu spektrofotometru. Ogniwo fotowoltaiczne z osadzoną w temperaturze 300°C metodą ALD warstwą antyrefleksyjną przy zadanej liczbie cykli 830 osiągnęło sprawność 12,51%, podczas gdy sprawność ogniwa referencyjnego bez warstwy antyrefleksyjnej wyniosła 7,22%.

EN

The main goal of the study was to examine the possibility of minimizing the reflectance of light, and consequently increasing the efficiency of the produced silicon solar cells, by creating an Al₂O₃ antireflection coating by atomic layer deposition method (ALD). Surface layer morphology studies were performed by using scanning electron microscopy, while the structure was examined by using an X-ray diffractometer. In order to determine the optical properties of the Al₂O₃ thin films, light reflectance measurements were performed using a spectrophotometer. The solar cell with deposited antireflection coating by the ALD method with a 830 number of cycles at 300°C reached the efficiency of 12.51%, while the efficiency of the reference cell is 7.22%.

5

Metallic skeletons as reinforcement of new composite materials applied in orthopaedics and dentistry

Dobrzański L. A., Dobrzańska-Danikiewicz A. D., Czuba Z. P., Dobrzański L. B., Achtelik-Franczak A., Malara P., Szindler M., Kroll L.

Archives of Materials Science and Engineering

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2018

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Vol. 92, nr 2

53--85

EN

Purpose: The article concerns the development of completely new groups of composite materials that can be used to produce functional replacements for damaged bones or teeth. Design/methodology/approach: A selective laser sintering was used to produce the reinforcement of those materials from titanium and its Ti6Al4V alloy in the form of skeletons with pores with adjustable geometric features. The matrix of those materials is either air or crystallised from the liquid AlSi12 or AlSi7Mg0.3 alloys condition after prior vacuum infiltration or human osteoblast cells from the hFOB 1.19 (Human ATCC - CRL - 11372) culture line. Findings: The porous material may be used for the non-biodegradable scaffold. After implantation into the body in the form of an implant-scaffold one, it allows the natural cells of the patient to grow into the pores of the implant, and it fuses with the bone or the appropriate tissue over time. The essential part of the implant-scaffold is the porous part inseparably connected with the core of solid materials. Into pores can grow living cells. Research limitations/implications: Biological-engineering composite materials in which natural cells were cultured in the pores in the laboratory next are combined as an artificial material with the natural cells of the patient in his/her body. Practical implications: The hybrid technologies of the all group of those materials were obtained and optimised. Numerous structure research was carried out using the most modern research methods of contemporary materials engineering, and mechanical tests and biological research involving the cultivation of natural cells were realised. Originality/value: The results of the research indicate the accuracy of the idea of implementing a new group of biological-engineering materials and the wide possibilities of their application in regenerative medicine.

6

Comparison of surface morphology and structure of Al2O3 thin films deposited by sol-gel and ALD methods

Szindler M., Szindler M. M., Pawlyta M., Jung T., Dobrzański L. A.

Journal of Achievements in Materials and Manufacturing Engineering

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2017

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Vol. 82, nr 2

49--57

EN

Purpose: of this research was examination Al2O3 thin film obtained with two different method, by sol-gel and ALD, and comparison the surface morphology and structure of deposited thin films. The films deposited on the monocrystalline silicon were tested for their suitability for use in silicon solar cells. Design/methodology/approach: Trimethylaluminum (TMA) was used as a precursor of Al2O3 which is reacted with water enabled the deposition of thin films by ALD method. By the sol-gel method the aluminium tri-sec butoxide (TBA) was used as a precursor to obtain Al2O3 thin films. The aluminium oxide solutions prepared by sol-gel method were deposited by spin coating technique. Examination of the structure and morphology of the surface of the Al2O3 thin films deposited by sol gel and ALD method were performed using atomic force microscope and transmission electron microscope. For the analysis of surface topography deposited thin films atomic force microscope XE-100 from Park Systems was used. Qualitative analysis of the chemical composition was carried out using an energy dispersion spectrometer (EDS). The detailed structural studies were conducted using a Titan 80-300 scanning-transmission electron microscope S/TEM from the FEI Company. Detailed research on the structure of the deposited Al2O3 thin films were performed. The HRTEM images and diffraction SAED were recorded. Findings: The small atoms clusters of a width less than 20 nm were documented. The thin film deposited by spin-coating technique on silicon substrate with 3000 rpm is characterized by RMS and Ra values of, respectively, 0.26 and 0.2 nm. RMS was defined as rough mean square parameter and Ra was defined as the arithmetic mean deviation of the profile from the mean line. An analysis of the frequency histograms of irregularities of the thin film obtained by the spin coating on a silicon substrate at 3000 rpm shows that a large part of them does not exceed 0.5 nm, and the single irregularities reach up to 2.2 nm. When comparing the AFM pictures with the thin films deposited by ALD technique and spin-coating it has been found that the thin films obtained on polished silicon substrates are similar in morphology. The EDS spectra shows the characteristic for oxygen (0.525 keV) and aluminum (1.486 keV) reflections derived from the thin film. In Al2O3 thin film obtained by ALD method the occurrence of α phase of aluminum oxide with a hexagonal structure was identified, just like in the case of thin film deposited by sol-gel. Practical implications: Known aluminium oxide properties and the possibility of obtaining a uniform thin layer show that it can be good material for different application. Precise description of the properties of Al2O3 is very important, since this material is one of the most frequently used in catalyst industry, in medicine, electronics and photovoltaics, as well as a protective layer. The Al2O3 thin film can act as passive and anti-reflective layer simultaneously in silicon solar cell. Using this thin film can simplify the technology of manufacturing silicon solar cells Originality/value: The paper presents researches of aluminium oxide thin films deposited by sol-gel and atomic layer deposition method on monocrystalline silicon.

7

Characteristics of ZnO thin films deposited by atomic layer deposition

Boryło P., Lukaszkowicz K., Szindler M., Basiaga M.

Journal of Achievements in Materials and Manufacturing Engineering

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2015

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Vol. 73, nr 2

86--91

EN

Purpose:The aim of this article was to examine the adhesion of ZnO thin films and the influence of temperature deposition process on their morphology. ZnO thin films have been deposited by atomic layer deposition. Design/methodology/approach: Adhesion of ZnO thin films was investigated using the scratch test method. Changes in the surface morphology were observed by scanning electron microscope (SEM). In order to confirm the chemical composition and phase investigated of thin films was carried out Energy-dispersive X-ray spectroscopy EDS and X-ray analysis. Findings: Results and their analysis have shown that the ZnO thin films deposited by ALD are uniform and homogenous. Significant impact on their morphology has the temperature of the deposition process. In the case of the adhesion temperature is negligible. Practical implications: Knowledge about the ALD ZnO thin films are possibility to obtaining a uniform thin films show that material has a big potential in optoelectronics and photovoltaic application. Originality/value: The article presents the original research results of the structure and properties of ZnO thin films deposited by ALD method, that can replace a commonly used transparent conductive layer.

8

Atomic layer deposition of TiO2 onto porous biomaterials

Dobrzański L. A., Dobrzańska-Danikiewicz A. D., Szindler M., Achtelik-Franczak A., Pakieła W.

Archives of Materials Science and Engineering

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2015

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Vol. 75, nr 1

5--11

EN

Purpose: The aim of this article was to investigate the possibility of uniform coverage of porous biomaterials with a thin film of titanium oxide deposited using the atomic layer deposition method (ALD) Design/methodology/approach: The porous biomaterials were prepared by Selective Laser Melting (SLM) from Ti powder. The TiO2 thin films were prepared with use of atomic layer deposition method. The changes in surface topography was observed by the atomic force microscope AFM XE-100 and scanning electron microscope SEM. The measurement of thickness performed using spectroscopic ellipsometer. Findings: Results and their analysis have confirmed show that the atomic layer deposition (ALD) method allows the deposition of homogenous and uniform thin films of TiO2 with the desired geometric characteristics onto porous Ti biomaterials. Practical implications: The combination of porous substrate made from titanium which has good mechanical properties with a biocompatible titanium oxide provides practical possibilities of use for example in dental engineering. Originality/value: The combination of porous substrate made from titanium which has good mechanical properties with a biocompatible titanium oxide provides practical possibilities of use for example in dental engineering.

9

Opracowanie efektywnych metod domieszkowania warstw ZnO glinem w procesie ALD i optymalizacja tych warstw

Pietruszka R., Luka G, Witkowski B. S., Wachnicki Ł., Gieraltowska S, Stapiński T., Marszałek K., Godlewski M.

Przegląd Elektrotechniczny

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2014

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R. 90, nr 10

203-205

PL

Warstwy tlenku cynku domieszkowanego atomami glinu ZnO:Al były wzrastane metodą osadzania warstw atomowych (ALD, z ang. A-atomic, L-layer, D-deposition). Na szklanych podłożach osadzono warstwy ZnO:Al (tzw. warstwa AZO) o grubości 200 nm. Temperatura osadzania warstwy AZO była równa 160 oC. Najlepsze parametry elektryczne oraz krystalograficzne otrzymano używając dwóch wysoko reaktywnych prekursorów cynku i glinu. Użyto diethylzinc jako prekursor cynkowy oraz trimethylaluminum jako prekursor glinowy. Otrzymane struktury wykazały wysoką transmisję oraz niskie rezystywności rzędu 10-3 Ωcm. Po optymalizacji procesu wzrostu warstw ZnO:Al testowano je jako przezroczyste elektrody do zastosowań fotowoltaicznych.

EN

We achieved high conductivity of zinc oxide layers doped with aluminum atoms using atomic layer deposition (ALD) method. Their growth mode, electrical and optical properties have been investigated. We discuss how the growth temperature and doping affect resistivity and optical properties of the films. The obtained resistivities of ZnO:Al thin films ( 1.2x10-3 Ωcm) and high transparency make them suitable for the TCO applications in photovoltaics.

10

Al2O3 antireflection coatings for silicon solar cells

Dobrzański L.A., Szindler M.

Journal of Achievements in Materials and Manufacturing Engineering

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2013

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Vol. 59, nr 1

13--19

EN

Purpose: The aim of this paper was to investigate changes in surface morphology and optical properties of thin films of Al2O3. Thin films were prepared using atomic layer deposition (ALD) method. Design/methodology/approach: The microanalysis was investigated by the Energy-dispersive X-ray spectroscopy EDS. The changes in surface topography was observed by the atomic force microscope AFM XE-100 and scanning electron microscope SEM. The results of roughness was obtained by the software XEI Park Systems. The measurement of thickness and dispersion of refractive index was performed using SE800 PV spectroscopic ellipsometer. The optical reflection was investigated by the spectrometer UV/VIS. Findings: Results and their analysis allow to conclude that the atomic layer deposition method enables uniform coating of smooth and complicated shapes surfaces. The thin film thickness depends only on the number of cycles, so that can be easily control the thickness of the material. Practical implications: Knowledge about the ALD Al2O3 optical parameters and the possibility to obtaining a uniform thin films show that the previously named material has a big potential in photovoltaic application. Originality/value: The paper presents some researches of aluminium trioxide thin films deposited by atomic layer deposition method on monocrystalline silicon.

11

Sol-gel and ALD antireflection coatings for silicon solar cells

Dobrzański L. A., Szindler M.

Elektronika : konstrukcje, technologie, zastosowania

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2012

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Vol. 53, nr 8

125-127

EN

This paper presents the possibility of using sol-gel and atomic layer deposition (ALD) methods for obtaining antireflection coatings for the silicon solar cells. The surface topography and reflection was studied using an atomic force microscope (AFM) and a spectrometer UV/VIS.

PL

W artykule przedstawiono możliwość zastosowania metod zol-żel oraz atomowego osadzania warstw do otrzymywania warstw antyrefleksyjnych stosowanych w krzemowych ogniwach słonecznych. Topografię powierzchni oraz odbicie optyczne badano przy użyciu mikroskopu sił atomowych oraz spektrometru UV/VIS.

12

Nanodruty ZnO otrzymywane metodą Osadzania Warstw Atomowych do zastosowań sensorowych

Wachnicki Ł., Witkowski B. S., Gierałtowska S., Kopalko K., Guziewicz E., Godlewski M.

Elektronika : konstrukcje, technologie, zastosowania

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2011

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Vol. 52, nr 8

85-86

PL

W pracy przedstawiamy wzrost nanodrutów ZnO metodą osadzania warstw atomowych ALD (ang. Atomic Layer Deposition). Do otrzymania nanodrutów ZnO użyto podtoże GaAs pokryte mieszaniną złota i galu uformowanego na powierzchni w postaci rozseparowanych "nanokul". W procesie ALD jako prekursor tlenowy została użyta woda dejonizowana, natomiast jako prekursor cynkowy został użyty chlorek cynku. Odpowiednio przygotowana mieszanina Au-Ga odgrywała rolę katalizatora wzrostu nanosłupków ZnO. Otrzymano nanosłupki ZnO w postaci krystalitów o długości do 1 mikrometra i około 100 nanometrów średnicy. Warto zaznaczyć, że jest to pierwsze zastosowanie metody ALD do wzrostu nanosłupków ZnO. Otrzymane nanosłupki użyto do wytworzenia czułych sensorów rozpuszczalników.

EN

In this work we present growth of ZnO nanowires (NWs) using ALD. As a substrate we used gallium arsenide with Au-Ga eutectic mixture prepared on the surface at high temperature. The soprepared substrate was used for growth of ZnO NWs using the ALD system. We used deionized water and zinc chloride as an oxygen and zinc precursors, respectively. The eutectic mixture plays a role of a catalyst for the ZnO NWs growth. The ZnO nanorods were obtained in a form of crystallites of up to 1 µm length and 100 nm diameter. It is the first demonstration of ZnO NWs growth by ALD using VLS (vapour-liquid-solid) approach. We demonstrate their application as solvents sensor.