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Content available remote Organiczne diody elektroluminescencyjne na bazie pochodnych pirazolochinoksalin
PL
Pochodne pirazolochinoksalin (A-PQX) badano pod kątem zastosowań w organicznych diodach elektroluminescencyjnych (OLED). Wykonane zostały pomiary widm absorpcyjnych, fotoluminescencyjnych oraz elektroluminescencyjnych. Zbudowane zostały jednowarstwowe komórki o strukturze ITO/PEDOT:PSS/PVK+A-PQX/Ca/Al. Wyznaczone zostały parametry charakterystyczne dla OLED. Maksymalna luminescencja otrzymana dla tych struktur wynosiła 884 cd/m2 dla diody na bazie 7-N,N-dietylo-1-fenylo-3-metylo-1H-pirazolo[3,4-b]chinoksaliny (7- PQX).
EN
Pyrazoloquinoxaline derivatives (A-PQX) have been studied for applications in organic light emitting diodes (OLEDs). Single-layer OLEDs with the structure: ITO/PEDOT:PSS/PVK+A-PQX/Ca/Al were built. Parameters characteristic for OLED were determined. The absorption, photoluminescent and electroluminescent spectra were measured. The maximum luminescence obtained for these structures was 884 cd/m2 for a diode based on 7-N,N-diethyl-3-methyl-1-phenyl-1H-pyrazolo[3,4-b]quinoxaline (7A-PQX).
EN
This study examined the influence of a weakly treated emission layer on ion beam processing for the performance of top emission polymer light-emitting diodes with an invert structure (top ITO as the anode). The emission layer used in this experiment was a polymer type SY, Livilux PDY-132 provided by Merck & Co. The surface of the emission layer was modified by a low energy ion beam treatment to obtain hydrophilic functional groups and improve the wettability. As a hole transfer layer, poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS, CLEVIOS AI 4083, Heraeus) was spin-coated on the ion beam treated emission layer and showed good adhesion properties. Consequently, through such an ion beam treatment that promotes the interface properties of these two layers, a uniform light emitting area was obtained and the light intensity in a top emission polymer light-emitting diode was improved.
3
EN
Significant amount of emitted light from an organic light emitting diode (OLED) is trapped as a result of total internal reflection (TIR) on a glass–air interface. One of the strategies to increase the light extraction efficiency is using a scattering thin film. A model is built using the Monte Carlo ray tracing method to simulate Mie scattering. Almost 100% of light trapped by the TIR can be extracted if the radius of the spherical scatters, the refractive index ratio between the matrix and the scatter and the concentration of the scatter are optimized. The implication is important for a high efficiency OLED used in the next generation lighting source.
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