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1

Mechanical flexibility and electrical reliability of ZnO-Al thin films on polymer substrates under different external deformation

Mohammed Dilveen W.

Advances in Materials Science

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2024

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Vol. 24, nr 1(79)

32--45

EN

Aluminum-doped zinc oxide (AZO) films have emerged as promising transparent electrodes for various optoelectronic applications due to their superior transparency, electrical conductivity, and cost-effectiveness compared to indium tin oxide (ITO). Despite their widespread use, investigations into the electromechanical properties of AZO films, especially under various mechanical deformations, remain limited. This study employs RF magnetron sputtering to deposit AZO films on polyethylene naphthalate (PEN) substrates and explores their mechanical behavior through uniaxial tensile fragmentation and bending tests, coupled with in-situ optical microscopy. Changes in electrical resistance of AZO films were monitored in situ during deformation. Fatigue behavior was examined to further understand mechanical failure, and SEM was used for surface characterization. A critical strain of about 3.1 percent was detected during uniaxial tensile testing, marking the onset of cracks in AZO-coated PEN. In contrast to thicker films, thinner films demonstrated improved stretchability beyond the initiation of crack onset strain. Tension and compression bending tests revealed that the material has excellent bendability, as shown by its critical radii of 5.4 mm and 3.9 mm, respectively. The bending reliability of AZO films under compression was found to be superior than that under tension. Bending fatigue experiments demonstrated that AZO films could withstand cyclic stress without experiencing noticeable cracks after 100 cycles and with very minor resistance change. This study contributes to the creation of more reliable and optimized flexible optoelectronic devices by giving substantial quantitative data on the performance of AZO films when exposed to mechanical stress.

2

Możliwość zastosowania przetworników optoelektronicznych typu PSD do pomiaru odkształceń sprężystych narzędzia skrawającego

Cichosz P., Skowronek H.

Mechanik

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2012

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R. 85, nr 8-9CD (SOS)

183--190

3

Biosensors for express-diagnostics of photosynthesis and acute viral infections

Romanov V., Starodub M., Galelyuka I.

Pomiary, Automatyka, Komputery w Gospodarce i Ochronie Środowiska

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2010

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nr 3

3-7

EN

The smart portable devices for express-diagnostics of photosynthesis and acute viral infections are designed in the V.M. Glushov Institute of Cybernetics of National Academy of Sciences of Ukraine in collaboration with National University of Life and Environmental Sciences of Ukraine. The first device is based on the measurements of chlorophyll fluorescence induction without plant destruction and the second one - on the effect of surface plasmon resonance. The features of devices are considered in the article.

PL

Instytut Cybernetyki Narodowej Akademii Nauk im. V.M. Glushov na Ukrainie we współpracy z Narodowym Uniwersytetem Życia i Nauk Środowiska na Ukrainie zaprojektował inteligentne przenośne urządzenia do szybkiej diagnostyki fotosyntezy oraz ostrych infekcji wirusowych. Pierwsze urządzenie jest oparte na pomiarach indukcji fluorescencji chlorofilu bez zniszczenia rośliny. Druga natomiast na zjawisku powierzchniowego rezonansu plazmonowego. Właściwości urządzeń opisane są w artykule.

4

Element optoelektroniczny o charakterystykach i(u) typu S

Stepowicz W. J., Górecki K.

Elektronika : konstrukcje, technologie, zastosowania

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2010

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Vol. 51, nr 10

28-30

PL

W pracy przedstawiono model oraz wyniki obliczeń i pomiarów charakterystyk statycznych i(u) nietypowego elementu optoelektronicznego powstałego na bazie transoptora, w którym połączono szeregowo spolaryzowaną przewodzącą diodę LED z kolektorem fototranzystora. Otrzymany w ten sposób element posiada charakterystyki statyczne i(u) typu S, co jest efektem występującego w nim dodatniego sprzężenia zwrotnego o charakterze elektryczno-optycznym.

EN

In the paper the model and the results of the measurements and calculations of the i(v) characteristics of an optoelectronic device are shown. This non-typical device is made on the basis of the optocoupler by connecting the LED diode in series with the collector of the phototransistor. The optoelectronic device has the S-shaped i(v) characteristics, what results from the positive opto-electrical feedback.