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Metrologiczne aspekty toru pomiarowego spektrofotometru z fotopowielaczem

Krawiecki Z.

Elektronika : konstrukcje, technologie, zastosowania

2014

Vol. 55, nr 2

29-31

W pracy zaprezentowano wybrane zagadnienia, które dotyczą techniki badań i pomiarów spektrofotometrem. Opisano wpływ przełączania źródeł promieniowania optycznego na wartość sygnału w torze pomiarowym spektrofotometru dwuwiązkowego. Zamieszczone wyniki obrazują widmo natężenia promieniowania optycznego w torze S (Sample) i R (Reference) przyrządu oraz transmitancję optyczną i jej fluktuacje. Rejestracji widma dokonano w zakresie długości fali UV, VIS i NIR , tj. od 190 nm do 900 nm.

Some selected questions concerned the technology and measurements with the spectrophotometer are presented. Influence of the optical radiation sources switching over on the signal value in the measuring line of double-beam spectrophotometer is described. The presented results show the spectrum of the optical radiation intensity in the device S (Sample) and R (Reference) lines as well as the optical transmittance and its fluctuations. The spectrum was recording in the range including the wavelengths from 190 nm to 900 nm.

Electrical and optical properties of NiO films deposited by magnetron sputtering

Guziewicz M., Grochowski J., Borysiewicz M., Kaminska E., Domagala J. Z., Rzodkiewicz W., Witkowski B. S., Golaszewska K., Kruszka R., Ekielski M., Piotrowska A.

Optica Applicata

2011

Vol. 41, nr 2

431--440

Films of transparent semiconductors are widely studied and developed because of high potential applications in electronics in last decade. Our work concerns the properties of NiO films fabricated by RF magnetron sputtering. Electrical and optical parameters of the films were characterized using Hall and transmittance measurements, respectively. P-type conductivity of as-deposited films and after annealing in oxygen or argon at the temperature range from 300 °C to 900 °C was verified. Transmittance of NiO films strongly depends on deposition temperature and oxygen amount during sputtering. Films deposited at room temperature without oxygen have transmittance near 50% in the visible range and resistivity about 65 ?cm. An increase in oxygen amount in deposition gas mixture results in higher conductivity, but transmittance decreases below 6%. Resistivity of 0.125 ?cm was attained at sputtering in oxygen. Films deposited at temperature elevated up to 500 °C are characterized by transmittance above 60% and lower conductivity. Annealing of NiO films in Ar causes resistivity to rise dramatically.

Silica-based versus silica-titania sol-gel materials - comparison of the physical properties: surface tension, gelation time, refractive index and optical transmittance

Ulatowska-Jarża A., Hołowacz I., Wysocka K., Podbielska H.

Optica Applicata

2009

Vol. 39, nr 1

211--220

Knowledge of the physical parameters and optical constants of sols and sol-gel materials is important in view of their possible applications. In this work, silica and silica-titania sols were examined. Gelation time, surface tension, refractive index and optical transmittance were measured. The sol-gel materials were produced from the silica precursor Si(OC2H5)4 mixed with the titanium dioxide precursor Ti(OC2H5)4 and 96% ethyl alcohol. It was stated that the surface tension of pure silica sols is much higher than in case of silica-titania sols. The refractive index of fresh samples is lower than of stored sols. The transmittance is highest for the fresh samples and it decreases with gelation time; however, this effect is stronger for silica-titania materials. By manipulating with the solvent content and titania addition, the required refractive index may be obtained.