Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 3

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: optical storage

Sortuj według:

Ogranicz wyniki do:

Polarization multiplexed bit data recording to submicron-particles-arrayed optical storage

Okuzono Daiki, Egami Chikara

Optica Applicata

2022

Vol. 52, nr 1

67--76

In this study, a submicron-particles-arrayed optical storage disk was fabricated by the spin coating method. Moreover, we have formed a multi-valued pit by irradiating linearly polarized laser beams at multiple angles (0° and 90°). The optical setup has the semiconductor laser (λ = 637 nm) for reconstructing and the SHG-YVO4 laser (λ = 532 nm) for recording. The optical setup measured the submicron-particles-arrayed optical storage as a confocal image by 2D scanning with a motorized stage.

Influence of powerful laser radiation on formation of pores in Si by electrochemical etching

Medvid A., Onufrijevs P., Fedorenko L., Yusupov M., Dauksta E.

Journal of Automation Mobile Robotics and Intelligent Systems

2009

Vol. 3, No. 4

166-168

The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.

Optoelectronic module for thresholding and binarisation operation.

Kasztelanic R., Mrozowicz M.

Optica Applicata

2001

Vol. 31, nr 2

467-478

The present paper deals with an optoelectronic module for thresholding and binarisation operation. The architecture is suitable for an associative pattern recognition. The article presents both the theoretical description and the real optical setup, as well as their comparison.