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InGaAs for infrared photodetectors. Physics and technology

Kaniewski J., Piotrowski J.

Opto-Electronics Review

2004

Vol. 12, No. 1

139--148

InGaAs is a variable band gap semiconductor with excellent transport and optical properties. This makes it attractive for electronic and optoelectronic devices. One of the most important applications is short wavelengh (1–3.6 µm) infrared photodetectors. Such devices are based on multilayer heterostructures with complex band gap and doping profiles. Significant progress in technology of the InGaAs heterostructures has been achieved with MBE and MOCVD growth. We discuss here the status and perspectives of infrared photodetectors based on advanced InGaAs heterostructures.