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Physical properties of ZnTe semiconductor thin films prepared by high vacuum resistive system

Abbas M., Shah N. A., Jehangir K., Fareed M., Zaidi A.

Materials Science Poland

2018

Vol. 36, No. 3

364--369

Zinc telluride (ZnTe) polycrystalline films have been grown on well-cleaned glass substrates by thermal vacuum evaporation technique using 99.99 % pure ZnTe powder as an evaporant. The samples were prepared at different substrate temperatures, rates of evaporation and thicknesses. The X-ray diffraction was used to study the structure of the films. The structures of the samples were found to be polycrystalline with preferred (1 1 1) orientation. Transmission spectra of all ZnTe films were recorded in the range of 300 nm to 2500 nm. The films were electrically characterized using Hall effect measurements at room temperature. It has been stated that the electrical resistivity, mobility and carrier concentration are strongly influenced by the substrate temperature. From the SEM results, it is clear that the surface of ZnTe is very smooth with occasional large particles on it.

Enhanced visibility of graphene: the effect of the Brewster angle

Adamson P.

Optica Applicata

2017

Vol. 47, nr 3

363--372

Visibility and simple optical diagnostics possibilities of graphene layers on dielectric and semiconductor substrates at the Brewster angle are analyzed. The analysis is based on a numerical simulation. Several oxide semiconductors (ITO, ZnO, TiO2), weakly absorbing Si, and strongly absorbing GaAs are considered. It is shown that at the Brewster angle the optical contrast of graphene flakes on a bare semiconductor substrate is actually strong enough to see them under an optical microscope and there is really no need to create an additional interference film on the substrate.

Structural, Morphological and Optical Characterization of SnO2:F thin films prepared by Chemical spray Pyrolysis

Yousif S. A., Abass J. M.

International Letters of Chemistry, Physics and Astronomy

2013

Vol. 13

90-102

Fluorine doped tin oxide (FTO) films were successfully prepared on glass and quartz substrate at a substrate temperature equal to for different fluorine doping (0, 0.05, 0.1, 0.15) by a homemade spray pyrolysis technique. The spray solution prepared from tin tetrachloride pentahydrate dissolved in distilled water at concentration and ammonium fluoride was added into the solution for fluorine doping. X-ray diffraction patterns of the spray-deposited (SnO2: F) films for different fluorine doping show that all the diffractograms contain the characteristic SnO2 orientations. The matching of the observed and standard d-values confirm that the deposited films are of tin oxide with tetragonal structure and the films are polycrystalline with (110) as a preferred growth orientation. The surface morphology of thin film has been examined by atomic force microscopy (AFM). The average transmittance in the visible region (at 550 nm) has been found (40 %, 47 %, 52 %, 59 %, 61 %) for the fluorine doping (0, 0.05, 0.1, 0.15, 0.2) respectively.