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Optical diagnostics of a single evaporating droplet using fast parallel computing on graphics processing units

Jakubczyk D., Migacz S., Derkachov G., Woźniak M., Archer J., Kolwas K.

Opto-Electronics Review

2016

Vol. 24, No. 3

108--116

We report on the first application of the graphics processing units (GPUs) accelerated computing technology to improve performance of numerical methods used for the optical characterization of evaporating microdroplets. Single microdroplets of various liquids with different volatility and molecular weight (glycerine, glycols, water, etc.), as well as mixtures of liquids and diverse suspensions evaporate inside the electrodynamic trap under the chosen temperature and composition of atmosphere. The series of scattering patterns recorded from the evaporating microdroplets are processed by fitting complete Mie theory predictions with gradientless lookup table method. We showed that computations on GPUs can be effectively applied to inverse scattering problems. In particular, our technique accelerated calculations of the Mie scattering theory on a single-core processor in a Matlab environment over 800 times and almost 100 times comparing to the corresponding code in C language. Additionally, we overcame problems of the time-consuming data post-processing when some of the parameters (particularly the refractive index) of an investigated liquid are uncertain. Our program allows us to track the parameters characterizing the evaporating droplet nearly simultaneously with the progress of evaporation.

Optical characterisation of strained-layer In/sub x/Ga/sub 1-x/As/GaAs MQW LED grown by MOVPE.

Sęk G., Ciorga M., Bryja L., Misiewicz J., Radziewicz D., Ściana B., Tłaczała M.

Optica Applicata

2000

Vol. 30, nr 1

183-188

We present the use of photoreflectance (PR) spectroscopy combined with the standard photoluminescence (PL) and electroluminescence (EL) for the room temperature optical investigation of strained-layer multiple quantum well (MQW) In/sub x/Ga/sub 1-x/As/GaAs light emitting diode (LED) for 1040 nm. In the PR spectra, except the fundamental transition observed also in the emission spectra, two extra features related to the active region of the device have been seen. The presence of these two excited state transitions allowed the band structure to be analysed and the correctness of the device performance to be checked. We repeated the measurements after the top p-doped GaAs cladding layer had been etched off and discussed the changes of the built-in electric field.