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Effect of Al2O3 decoration on the opto-electrical properties of a porous Si/Cr2O3 composite

Ghrib Mondher, Tlili B., Razeg M., Ouertani R., Gaidi M., Ezzaouia H.

Opto-Electronics Review

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2020

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Vol. 28, No. 3

155 --163

EN

In this work, we present an extensive investigation of the effect of Al₂O₃ decoration on the morphological, structural and opto-electronic properties of a porous Si (Sip)/Cr₂O₃ composite. The Sip layers were prepared by the anodization method. Al₂O₃ and Cr₂O₃ thin films were deposited by physical vapour deposition. The morphological and micro-structural properties of Sip/Cr₂O₃/Al₂O₃ were studied using the scanning electron microscope, energy dispersive X-ray spectroscopy and X-ray diffraction techniques. It was found that Al₂O₃ decoration with different concentration strongly affects the Sip/Cr₂O₃ microstructure mainly at the level of porosity. Variable angle spectroscopic ellipsometry demonstrates a strong correlation between optical constants (n and k) of Sip/Cr₂O₃/Al₂O₃ and microstructure properties. Dielectric properties of Sip/Cr₂O₃/Al₂O₃ such as electrical conductivity and conduction mechanism were explored using impedance spectroscopy over the temperature interval ranging from 340 to 410°C. A semiconductor to the metallic transition has been observed at high frequency.

2

Wybrane właściwości cienkich warstw tlenków wolframu wytwarzanych przy różnych warunkach procesu rozpylania magnetronowego

Lubańska Aneta, Mańkowska Ewa, Mazur Michał

Elektronika : konstrukcje, technologie, zastosowania

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2020

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Vol. 61, nr 10

10--12

PL

W pracy przedstawiono wyniki badań i analizy właściwości cienkich warstw tlenków wolframu wytworzonych metodą rozpylania magnetronowego. Proces wytwarzania przeprowadzono przy zmiennych warunkach technologicznych, takich jak proporcja mieszaniny gazów O2:Ar oraz odległość target-podłoże. Zwiększenie przepływu argonu w mieszaninie gazów O2:Ar podczas procesu spowodowało zmianę właściwości elektrycznych cienkich warstw z dielektrycznych na półprzewodnikowe. Ponadto, wyniki pomiarów współczynnika transmisji światła wykazały, że wraz ze wzrostem przepływu argonu przezroczystość warstw ulega pogorszeniu. Mniejsze odległości target-podłoże skutkowały zwiększeniem szybkości nanoszenia warstw. Wszystkie naniesione warstwy charakteryzowały się małą chropowatością oraz właściwościami hydrofilowymi powierzchni.

EN

The aim of the presented work is investigation of the properties of tungsten oxide thin films deposited by magnetron sputtering. The process was performed with use of various technological properties such as O2:Ar gas mixture ratios and target-substrate distance. Increase of argon content in O2:Ar gas mixture during process caused change of electrical properties of thin films from dielectric to semiconducting. Moreover, measurements of light transmission coefficient showed that thin layer transparency decreased with increase of argon content. Decrease of target-substrate distance resulted in an increase of deposition rate. All deposited thin films had low roughness and hydrophilic properties.

3

Al-doped ZnO films deposited by magnetron sputtering: effect of sputtering parameters on the electrical and optical properties

Pan Q., Song X.

Materials Science Poland

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2017

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Vol. 35, No. 2

374--381

EN

Aluminum-doped zinc oxide (AZO) thin films were prepared by magnetron sputtering method. The influences of deposition pressure, substrate temperature, Ar flow rate and film thickness on optical and electrical properties were investigated using ultraviolet-visible (UV-Vis) spectrometer and Hall measurements. The experimental results revealed that a low resistivity, smaller than 4 × 10-4 Ω·cm, was obtained when the deposition pressure was smaller than 0.67 Pa and substrate temperature about 200 °C. Ar flow rate had a small influence on the resistivity but a big influence on the transparency at near infrared range (NIR). We obtained optimized AZO thin films with high ponductivity and transparency at low deposition pressure, small Ar flow and appropriate temperature (around 200 °C). The etching behavior of the AZO thin films deposited at the different Ar flow rates was also studied in this paper. The results show that Ar flow rate is a very important factor affecting the etching behavior.

4

Optical and electrical properties of (Ti-V)Ox thin film as n-type Transparent Oxide Semiconductor

Mazur M., Domaradzki J., Wojcieszak D.

Bulletin of the Polish Academy of Sciences. Technical Sciences

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2014

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Vol. 62, nr 3

583--594

EN

In this paper, the influence of vanadium doping on optical and electrical properties of titanium dioxide thin films has been discussed. The (Ti-V)Ox thin films was deposited on silicon and Corning glass substrates using high energy reactive magnetron sputtering process. Measurements performed with the aid of x-ray diffraction revealed, that deposited thin film was composed of nanocrystalline mixture of TiO2-anatase, V2O3 and β-V2O5 phases. The amount of vanadium in the thin film, estimated on the basis of energy dispersive spectroscopy measurement, was equal to 3 at. %. Optical properties were evaluated based on transmission and reflection measurements. (Ti-V)Ox thin film was well transparent and the absorption edge was shifted by only 11 nm towards longer wavelengths in comparison to undoped TiO2. Electrical measurements revealed, that investigated thin film was transparent oxide semiconductors with n-type electrical conduction and resistivity of about 2.7 · 105 Ωcm at room temperature. Additionally, measured I-V characteristics of TOS-Si heterostructure were nonlinear and asymmetrical.

5

The influence of glass surface preparation on electrical and optical properties of SnO2 thin films obtained by spray pyrolysis technique

Nocuń M., Pająk Z.

Optica Applicata

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2008

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Vol. 38, nr 1

181-187

EN

SnO2 conducting thin films were prepared by spray pyrolysis. Glass surface was prepared by etching in HF and acetic acid solutions. Sodium barrier coatings with different compositions were prepared by the sol-gel technique. The influence of the glass surface preparation on optical properties of SnO2 was studied using reflectance spectroscopy. XPS was used as a tool to evaluate barrier properties of the coating. The morphology of the thin layer was studied by a scanning electron microscope. The results have shown that the titanium containing coating has the best sodium diffusion barrier property. The conductivity of SnO2 film strongly depends on the glass surface preparation. The lowest conductivity was measured for clean glass but the highest for alumina containing barrier coating.