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1
Content available Strategia tworzenia aplikacji z wykorzystaniem pamięci nieulotnych
Łopusiński H., Łopusiński M., Jóźwiak I.
Zeszyty Naukowe. Organizacja i Zarządzanie / Politechnika Śląska
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2017
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z. 113
233--238
PL
W artykule omówiono sposób, w jaki należy tworzyć oprogramowanie z wykorzystaniem pamięci nieulotnych. Opisano zagadnienia użycia transakcji, alokacji oraz dealokacji obszarów pamięci, zapewnienia trwałości obiektów oraz danych używanych przez aplikacje. Przedstawiono podstawowe techniki oraz algorytmy użycia biblioteki Non-Volatile Memory.
EN
The paper presents how to create software using non-volatile memory. Methodology of use of transactions, memory allocation and deallocation, assurance persistence of objects and data used by applications was described. Basic techniques and algorithms for using Non-Volatile Memory were presented.
2
Content available Zapis danych w kasecie katastroficznej systemu rejestracji parametrów lotu
Kordowski P., Chodnicki M., Cuper W., Nowakowski M.
Autobusy : technika, eksploatacja, systemy transportowe
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2016
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R. 17, nr 6
227--230
PL
W artykule zostały omówione procedury i algorytmy pozwalające uzyskać jak największą wiarygodność i bezpieczeństwo zapisywanych informacji, w systemach rejestracji parametrów lotu. Opracowanie zostało napisane w oparciu o doświadczenia powstałe w trakcie procesu projektowania rejestratorów katastroficznych w Instytucie Technicznym Wojsk Lotniczych. W publikacji można znaleźć informacje na temat problematyki związanej z zastosowaniem nowoczesnych pamięci nieulotnych w układach, które muszą spełniać surowe wymagania niezawodnościowe oraz rozwiązania zaproponowane przez ITWL.
EN
The article presents procedures and algorithms allowing providing the greatest possible reliability and security of information stored into flight data recorder. The content of the paper is based on the experience gained during the design process of flight data recorders in the Air Force Institute of Technology. The lecture describes generic issues related with application of modern non-volatile memory into systems that must meet the stringent reliability requirements and the solutions proposed by ITWL.
3
Content available Laser nanosoldering of golden and magnetite particles and its possible application in 3D printing devices and four-valued non-volatile memories
Jaworski J, Gawłowski G.
Management and Production Engineering Review
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2015
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Vol. 6, No. 4
43--54
EN
In recent years the 3D printing methods have been developing rapidly. This article presents researches about a new composite consisted of golden and magnetite nanoparticles which could be used for this technique. Preparation of golden nanoparticles by laser ablation and their soldering by laser green light irradiation proceeded in water environment. Magnetite was obtained on chemical way. During experiments it was tested a change of a size of nanoparticles during laser irradiation, surface plasmon resonance, zeta potential. The obtained golden - magnetite composite material was magnetic after laser irradiation. On the end there was considered the application it for 3D printing devices, water filters and fourvalued non-volatile memories.
4
Content available In-system programming of non-volatile memories on microprocessor-centric boards
Tsertov A, Devadze S., Jutman A., Jasnetski A
International Journal of Microelectronics and Computer Science
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2014
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Vol. 5, nr 1
25--34
EN
With the continuous growth of capacity of non-volatile memories (NVM) in-system programming (ISP) has become the most time-consuming step in post-assembly phase of board manufacturing. This paper presents a method to assess ISP solutions for on-chip and on-board NVMs. The major contribution of the approach is the formal basis for evaluation of the state-of-the-art ISP solutions. The proposed comparison pin-points the time losses, that can be eliminated by the use of multiple page buffers. The technique has proven to achieve exceptionally short programming time, which is close to the operational speed limit of modern NVMs. The method is based on the ubiquitous JTAG access bus which makes it applicable for the most board manufacturing strategies despite a slow nature of JTAG bus.
5
Content available On In-System Programming of Non-volatile Memories
Tsertov A, Devadze S., Jutman A, Jasnetski a
International Journal of Microelectronics and Computer Science
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2013
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Vol. 4, nr 2
72--78
EN
With the continuous growth of capacity of non-volatile memories (NVM) in-system programming (ISP) has become the most time-consuming step in post-assembly phase of board manufacturing. This paper presents a method to assess ISP solutions for on-chip and on-board NVMs. The major contribution of the approach is the formal basis for comparison of state-of-the-art ISP solutions. The effective comparison pin-points the time losses, that can be eliminated by the use of multiple page buffers. The technique has proven to achieve exceptionally short programming time, which is close to the operational speed limit of modern NVMs. The method is based on the ubiquitous JTAG access bus which makes it applicable for the most board manufacturing strategies despite a slow nature of JTAG bus.
6
Content available remote Optimization of MFIS structures containing poly(vinylidene-fluoride trifluoroethylene) for non-volatile memory applications
Henkel K., Seime B., Paloumpa I., Müller K., Schmeisser D.
Materials Science Poland
|
2010
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Vol. 28, No. 1
117--128
EN
In the paper, we report on ways to optimize metal-ferroelectric-insulator-semiconductor (MFIS) stacks in terms of the thickness combination of the ferroelectric and the buffering insulator layers in order to reduce the operation voltage of MFIS based non-volatile memory elements. The stack contains poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) as a ferroelectric layer. We discuss the optimization of the deposition of this material in order to produce thin films with high polarization. This must be accompanied by an adapted buffer layer, where reduction of thickness as well as increase of permittivity can be taken into account. We show the results based on capacitance voltage measurements (CV) on MFIS stacks, where SiO2 and Al2O3of different thicknesses have been used. Furthermore, we perform simulations of the CV characteristics and we are able to quantify the polarization and decline it from the CV curves. We observe for a 120 nm P(VDF-TrFE)/11 nm Al2O3 stack in a š20V CV loop almost saturated polarization values as predicted by the simulations in that way.
7
Content available remote Advances in flash memory devices
Ludwig C., Beug M. F., Küsters K. H.
Materials Science Poland
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2010
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Vol. 28, No. 1
105--115
EN
Fundamental challenges are discussed concerning the down-scaling of flash memory cells for mass storage applications. A general scaling issue for all various memory cell concepts is the structuring limit of conventional lithography. Therefore sub-lithographical structuring methods like e.g., double-patterning for future flash chips, have been evaluated. Another common scaling challenge of charge trapping (CT) and floating gate (FG) cells, the two future concurrent flash memory cell concepts, is the introduction of new materials such as high k dielectrics. Their implementation into CT and FG cells and the scaling related electrical issues of both cell concepts is also been discussed.
8
Content available Multi-scale simulation of hybrid silicon nano-electromechanical (NEM) information systems
Mizuta H., Ramirez M. A. G., Tsuchiya Y., Nagami T., Sawai S., Oda S., Okamoto M.
Journal of Automation Mobile Robotics and Intelligent Systems
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2009
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Vol. 3, No. 4
58-61
EN
This paper presents emerging NEM hybrid systems for advanced information processing and describes our recent attempts of developing new multi-physics simulation technologies for these NEM systems at micro-, nano- and atomscales.
9
New materials for memories (FeRAM): study of SrBi2Ta2O9 (SBT) thin films on a conductive oxide substrate.
Nihoul G., Villain S., Madigou V., Nigrelli E.
Inżynieria Materiałowa
|
2001
|
R. XXII, nr 5
663-663
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