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An impact of frequency on capacitances of partially-depleted SOI MOSFETs

Tomaszewski D., Łukasik L., Zaręba A., Jakubowski A.

Journal of Telecommunications and Information Technology

2000

nr 3-4

67-71

A non-quasi-static model of partially-depleted SOI MOSFETs is presented. Phenomena, which are particularly responsible for dependence of device admittances on frequency are briefly described. Several C-V characteristics of the SOI MOSFET calculated for a wide range of frequencies, preliminary results of numerical analysis and of measurements and brief analysis of the results are presented. Methods of model improvement are proposed.