Wyniki wyszukiwania - BazTech

Ograniczanie wyników

2 Optica Applicata

Znaleziono wyników: 2

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: nitride VCSELs

Sortuj według:

Ogranicz wyniki do:

Some expected extraordinary behaviours of nitride vertical-cavity surface-emitting lasers following from special features of nitride materials

Nakwaski W., Maćkowiak P., Sarzała R.P., Wasiak M.

Optica Applicata

2004

Vol. 34, nr 1

5-15

In spite of dramatic efforts of numerous technological centres in the world, until now room-temperature continuous-wave operation of nitride diode vertical-cavity surface-emitting lasers (VCSEL) has not been reported. It is probably associated with special features of nitride materials, which essentially distinguish them from other AIIIBV semiconductors. In this situation, technological centres need theoretical support to successfully design, modify and optimise possible structures of nitride VCSELs. Therefore, in the present paper, important mutual interactions between physical phenomena taking place inside nitride VCSELs and crucial for their operation are analysed. Some practical guidelines for nitride VCSEL designers are also drawn up.

Impact of mismatch-related phenomena on a room-temperature operation of nitride VCSELs.

Maćkowiak W., Nakwaski W.

Optica Applicata

2000

Vol. 30, nr 1

125-140

The influence of mismatch-related phenomena (mostly strain fields and structure defects) on a room-temperature (RT) operation of possible nitride VCSELs is examined using a simple but still detailed analytical model. Intentionally introduced stress fields within nitride VCSEL quantum-well (QW) active regions (band-gap engineering) are found to have a much weaker effect on their optical gain than in the case of conventional arsenide and phosphide VCSELs. Dislocation densities (including misfit dislocations), on the other hand, have a considerable harmful impact on VCSELs thresholds, mostly because of increasing scattering losses and decreasing internal quantum efficiency. Single-quantum-well nitride VCSELs are found to be very sensitive to the above impact. A reasonable increase in a number of QWs in multiple-quantum-well VCSELs tremendously improves their performance. In the case of relatively high dislocation densities, bulk double-heterostructure VCSELs may turn out to be the best nitride designs although they may also exhibit too high thresholds to lase at RT.