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The morphology of AlSn20 films prepared by magnetron sputter deposition.

Drewnowska M., Tasak E., Borus E.

Inżynieria Materiałowa

1998

R. XIX, nr 4

1092-1095

AlSn20 films were prepared by magnetron sputter deposition in an argon gas plasma. The films were obtained at different working pressures and contents of oxygen in vacuum chamber, as well as at different cathode - substrate distance and sputter rates. The observation of film morphology was carried out with the use of SEM. It was proved that distance cathode - substrate, content of oxygen and gas pressure in vacuum chamber exert significant effect on the morphology of AlSn20 films.

Electrical properties and transmission electron microscopy study on sputtered Cu/Ni multilayer films.

Worek C., Jankowski H., Ciura F.

Inżynieria Materiałowa

1998

R. XIX, nr 4

840-843

Electrical properties as well as the structure and morphology of multilayered Cu/Ni films deposited by magnetron sputtering were investigated. The influence of the deposition and annealing parameters on the temperature coefficient of resistance (TCR) and sample resistivity were determined. Using TEM images the dependence of the grain size of crystalline films on the sublayer Cu and Ni thickness and annealing temperature was investigated.