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Fabrication of CdMgTe/Cd(Mn)Te nanostructures with the application of high-resolution electron-beam lithography

Bobko E., Płoch D., Wiater M., Wojtowicz T., Wróbel J.

Opto-Electronics Review

2017

Vol. 25, No. 2

65--68

In this work we report on fabrication of quantum wires and quantum point contacts from the modulation doped CdMgTe/Cd(Mn)Te structures, with the application of a high-resolution electron-beam lithography. We emphasize on methods which were not yet utilized for these substrate materials. In particular, we describe the so-called shallow-etching approach, which allows for the fabrication of quantum constrictions of a physical width down to 100 nm, which are characterized by the smoother confining potential as compared to the deep-etched devices. For that purpose, a single-line exposure mode of electron-beam lithography has been used. We demonstrate also, how to combine the etching of separating grooves with the thermal evaporation of metal side-gates into a single post-processing stage of a quantum point contact fabrication. This article is an expanded version of the scientific reports presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland.

Nanopatterning in a compact setup using table top extreme ultraviolet lasers

Wachulak P. W., Capeluto M. G., Menoni C. S., Rocca J. J., Marconi M. C.

Opto-Electronics Review

2008

Vol. 16, No. 4

444-450

The recent development of table top extreme ultraviolet (EUV) lasers have enabled new applications that so far were restricted to the use of large facilities. These compact sources bring now to the laboratory environment the capabilities that will allow a broader application of techniques related to nanotechnology and nanofabrication. In this paper we review the advances in the utilization of EUV lasers in nanopatterning. In particular we show results of the nanopatterning using a table-top capillary discharge laser producing 0.12-mJ laser pulses with 1.2-ns time duration at a wavelength λ = 46.9 nm. The nanopatterning was realized by interferometric lithography using a Lloyd's mirror interferometer. Two standard photoresists were used in this work, polymethyl methacrylate (PMMA) and hydrogen silsesquioxane (HSQ). Pillars with a full width half maximum (FWHM) diameter of 60 nm and holes with FWHM diameter of 130 nm were obtained over areas in excess of 500x500 µm².