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Detection of optical radiation

Rogalski A., Bielecki Z.

Bulletin of the Polish Academy of Sciences. Technical Sciences

2004

Vol. 52, nr 1

43-66

An overview of the important techniques for detection of optical radiation from the ultraviolet, through visible to infrared spectral regions is presented. At the beginning single-point devices are considered. Next, different application circuits used in direct detection systems together with elucidation of the design of front-end circuits and discussion of their performance are presented. Third part of the paper is devoted to advanced techniques including coherent detection. Finally, the updated information devoted to readout of signals from detector arrays and focal plane arrays is included. It is shown that detector focal plane technology has revolutionized many kinds of imaging in the past 25 years.

ALxGayIn₁-x-yAs/InP : based quantum well infrared photodetectors

Jelen C., Razeghi M.

Opto-Electronics Review

1999

Vol. 7, No. 1

1-17

In order to tune the wavelength of a lattice-matched quantum well infrared photodetector (QWIP) over the range 3-20 µm, new designs are demostrated for the first time which utilise ALxGayIn₁-x-yAs layers lattice-matched to InP and grown by gas-source molecular beam epitaxy. We demonstrate 8, 13, and 18-µm QWIPs using the lattice-matched n-doped (Al xGa₁-x)₀,₄₈In₀,₅₂As/InP system. We also review QWIP structures of Ga₀,₄₇In₀,₅₃As/Al₀,₄₈In₀,₅₂As grown on InP substrate with peak photoresponse at 4 µm. Combining these two materials, we report the first multicolor detectors that combine lattice-matched quantum wells of Ga₀,₄₇In₀,₅₃As/Al₀,₄₈In₀,₅₂As and Ga₀,₄₇In₀,₅₃As/InP. Utilising two contacts, a voltage tunable, lattice-matched, two colour QWIP with a peak wavelength of 8 µm at a bias of V = 5 V and a peak wavelength of 4 µm at V = 10 V is demonstrated. Using the measured noise data for Ga₀,₄₇In₀,₅₃As/InP detectors, we have calculated the thermal generation rate, bias-dependent gain, electron trapping probability, and electron diffusion length. The calculated thermal generation rate(~ 7 x 10²² cm⁻³ s⁻¹) is similar to AlxGa₁-xAs/GaAs QWIPs with similar peak wavelengths, but the gain is 50 times larger, indicating improved transport and carrier lifetime are obtained in the binary InP barriers.