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Monolithic silicon E-DeltaE telescope produced by the Quasi-Selective Epitaxy

Kordyasz A., Nossarzewska-Orłowska E., Piasecki E., Lipiński D., Brzozowski A.

Nukleonika

2003

Vol. 48, nr 1

31-34

A monolithic, silicon, E-DeltaE telescope with a 20 žm thick DeltaE detector followed by a 300 žm thick E detector based on the n-p+-n structure was produced using a new developed process named Quasi-Selective Epitaxy (QSE). The resistivity profile of the n-p+-n structure and E-DeltaE two-dimensional contour plots obtained after irradiation of the monolithic E-DeltaE telescope by alfa-particles are presented. An energy resolution of about 1 MeV was obtained.