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The multiscale modelling of thin films growth

Kopernik M., Kot R.

Hutnik, Wiadomości Hutnicze

2010

Vol. 77, nr 8

403-406

The multiscale model of layers growth in systems of nanocoatings characterized by properties of functionally graded materials, which is based on the cellular automata method, is presented in the paper. Simulations performed using the developed program allowed the analysis of the structure of generated layers. It was observed that main processes active in coatings deposition, like adsorption and surface diffusion, depend on intensity of the cell flux and the substrate temperature. Numerical tests were performed for various parameters of the growth process and predictive capabilities of the model are evaluated in the paper.

W pracy przedstawiono wieloskalowy model wzrostu warstw w układach nanopowłok o własnościach materiałów gradientowych, który oparto na metodzie automatów komórkowych. Symulacje przeprowadzone we własnym oprogramowaniu pozwoliły na wykonanie analiz związanych ze strukturą powstałej warstwy. Stwierdzono, że dominujące w napylaniu powłok procesy, takie jak adsorpcja i dyfuzja powierzchniowa, zależą od natężenia strumienia cząstek oraz temperatury podłoża. Wykonano zestaw symulacji testowych dla generowanych powłok dla różnych wartości kluczowych parametrów.

Properties and origin of oval defects in epitaxial structures grown by molecular beam epitaxy

Szerling A., Kosiel K., Wójcik-Jedlińska A., Płuska M., Bugajski M.

Optica Applicata

2005

Vol. 35, nr 3

537-548

A class of macroscopic, so-called oval defects, which may be found in an epitaxial A3B5 materials grown by molecular beam epitaxy (MBE) technique, is studied in this paper. The investigations' were performed on the structures containing (Al)GaAs or InGaAs layers. The geometry, morphology as well as the optical properties of defects were studied by different experimental methods, like spatially resolved photoluminescence (SRPL), scanning electron microscopy (SEM) and cathodoluminescence (CL). The conclusions are drawn as to the sources of defects and conditions of their appearance.

Magnetic field sensors based on undoped In0.53Ga0.47As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition

Przesławski T., Wolkenberg A., Kaniewski J., Regiński K., Jasik A.

Optica Applicata

2005

Vol. 35, nr 3

627-634

In this paper we, describe the design and fabrication process of Hall and magnetoresistor cross-shaped sensors using In0.53Ga0.47As/InP layer structures as active media. The influence of geometric correction factor GH on sensitivity parameters of these devices has been investigated. The results have been used in order to optimize the structure design behavior at temperatures ranging from 3 to 300 K. The large changes of the galvanomagnetic parameters vs. magnetic field and temperature allow these devices to be used as signal and measurement magnetic field sensors.