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Photoreflectance study of Al0.45Ga0.55As/GaAs superlattice: optical transitions at the miniband .GAMMA. and .PI. points

Motyka M., Sęk G., Janiak F., Ryczko K., Misiewicz J., Kosiel K., Bugajski M.

Optica Applicata

2009

Vol. 39, nr 4

897-902

In this paper, we present the results of photoreflectance (PR) investigation of an Al0.45Ga0.55As/GaAs superlattice (SL). The modulation spectra have revealed a number of features at both room and low temperature (10 K) which could be associated with the optical transitions between the minibands of the superlattice. Based on calculations within the effective mass approximation they have been identified as transitions between the miniband edges, i.e., the so-called ? and ? points, respectively, including the high index transitions and those related to the light holes. Tuning the structure parameters around the nominal ones treated as semi-free in the theoretical considerations allowed the growth accuracy of such a complex system to be verified.

Research on absorption spectroscopy of CH4 around 1,315um

Shao J., Gao X., Deng L., Huang W., Yang Y., Pei S., Yuan Y., Zhang W.

Optica Applicata

2005

Vol. 35, nr 1

155-162

Measurements have been made about the absorption features of Ch4 around 1.315 um by using the second harmonic detwction technique of tunable diode laser with multipass cell (white). Studies concerning the second harmonic detecyion technique of CH4 around 1.65 um have been widely reported currently, but reports about the absorption features in NIR spectra of CH4 around 1.315 um can scarcely be found. We have performed a detailed study about the absorption features of CH4 around 1.315 um and we presents the results here. We give the line positions, the line intensties and self-broadening coefficients near 1.315 um at a pressure of 0.077 torr.