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Investigation of strained InGaAs layers on GaAs substrate.

Jasik A., Sass J., Mazur K., Wesołowski M.

Optica Applicata

2007

Vol. 37, nr 3

237-242

A set of In0.13Ga0.87As layers of various thicknesses on GaAs substrate has been grown by low pressure metalorganic vapour phase epitaxy (LP MOVPE). The initial stage of relaxation process has been investigated and critical layer thickness (CLT) has been determined. The investigations were performed by applying atomic force microscopy (AFM), high resolution X-ray diffractometry (HR XRD) with conventional and synchrotron radiation. The value of CLT determined by AFM observations agrees with that obtained from diffuse scattering measurements. The value is in agreement with HR XRD results.

Multilayer strained Si/SiGe structures: fabrication problems, interface characteristics, and physical properties

Orlov L. K., Horvath Z. J., Ivina N. L., Vdovin V. I., Steinman E. A., Orlov M. L., Romanov Y. A.

Opto-Electronics Review

2003

Vol. 11, No. 2

169-174

The objectives of this investigation are structural and physical characteristics of the n-Si1–xGex/n(p)-Si heterojunction under strong elastic deformation of Si1–xGex layers which gives rise to misfit dislocations in the heteroboundary region; the factors playing the main role in formation of the band structure of the system; the use of transmission electron microscopy and optical methods for determination of the phenomena connected with misfit dislocations in the grown epitaxial structure; the electrical characteristics of diode structures and the process of electron-hole recombination via dislocation states in a heterojunction.