Minority carriers diffusion in Smart Power ICs substrate can be simulated in standard spice-like software using the EPFL Substrate Model. This model is based on a parasitic substrate network extracted from the integrated circuit layout following a given meshing strategy. In this work Design of Experiments (DOE) techniques are used to run a limited number of simulations to evaluate the influence of the meshing strategy on the accuracy of the model when compared to Technology Computer Aided Design (TCAD) simulations. A parasitic lateral BJT will be analyzed as two-dimensional case study with both spice-like and finite element simulations for the minority carriers diffusion. Using statistical analysis a linear model is developed to discover the main geometrical domains influencing the accuracy of the studied model.
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