Wyniki wyszukiwania - BazTech

Ograniczanie wyników

Znaleziono wyników: 3

Liczba wyników na stronie

Wyniki wyszukiwania

Wyszukiwano:
w słowach kluczowych: milimeter wave

Sortuj według:

Ogranicz wyniki do:

Evaluation of millimeter wave propagation parameters in fifth generation (5G) mobile systems

Berisha Doruntinë, Avdiu Agnesë, Ibrani Mimoza

Przegląd Elektrotechniczny

2023

R. 99, nr 9

164--170

This paper analyzes the millimeter wave propagation parameters in 5G systems based on simulation results at 4 GHz, 28 GHz, and 73 GHz for different environments, urban and rural. The analyzed propagation parameters are path loss, shadow fading and path loss exponent for different scenarios with line-of-sight and non-line-of-sight. Additionally, we compared millimeter wave signal propagation from directional and omnidirectional antennas for the scenario when we have 100 receiving spots.

W artykule przeanalizowano parametry propagacji fal milimetrowych w systemach 5G na podstawie wyników symulacji dla częstotliwości 4 GHz, 28 GHz i 73 GHz dla różnych środowisk miejskich i wiejskich. Analizowanymi parametrami propagacji są utrata ścieżki, zanikanie cienia i wykładnik utraty ścieżki dla różnych scenariuszy z linią wzroku i bez linii wzroku. Dodatkowo porównaliśmy propagację sygnału fal milimetrowych z anten kierunkowych i dookólnych dla scenariusza, w którym mamy 100 punktów odbiorczych.

Double balanced resistive mixer for mobile applications

Circa R., Pieńkowski D., Boeck G., Müller M.

Kwartalnik Elektroniki i Telekomunikacji

2004

Vol. 50, z. 4

553-565

We present a double balanced resistive mixer for mobile applications using a 0.35 um MOSFET-Technology. The mixer has been designed for direct conversion receivers with RF - and IF - frequency ranges of 2-3 GHz and DC to 50 MHz, respectively. Excellent performance has been achieved. Typical values are 6 dB conversion loss, 7 dB noise figure, 6.5 dBm 1 dB power compression, 16.5 dBm third order and 55 dBm second order intercept point, and 50 dB isolation between all ports. The mixer does not consume any DC-power and the needed LO-voltage amplitude is 1 V typical. No low frequency noise was detectable down to 10 kHz. We report on the design strategy and present simulated and measured results.

CMOS MMICs for microwave and millimeter wave applications

Ferndahl M., Zirath H., Moltagh B. M., Masud A., Angelov I., Vickes H. O., Gevorgian S., Ingvarsson F.

Kwartalnik Elektroniki i Telekomunikacji

2004

Vol. 50, z. 4

515-538

Recent results on MMICs based on a 90-nm CMOS process are presented. Linear and nonlinear models were developed for the transistors based on S-parameters, noise parameters, and power spectrum measurements. Based on em-simulations, models for multilayer capacitances, MIM-capacitances, various transmission lines etc were also developed. Amplifiers, frequency mixes, and frequency multipliers were then designed, fabricated and characterized. Amplifiers with a gain of 6 and 3,5 dB per stage at 20 and 40 GHz respectively, were demonstrated as well as frequency multipliers from 20 to 40 GHz with 15.8 dB conversion loss, and 30 to 60 GHz multipliers with 15.3 dB conversion loss. Resistive mixers at 20, 40, and 60 GHz were also demonstrated with promissing results.