Various chemical treatments of GaSb and related compounds has been studied with the aim to develop procedures of polishing of GaSb substrates, preparation of their surfaces for deposition of metal and dielectric films, for liquid phase epitaxial growth, and finally fabrication of passivating coatings on surfaces of GaSb and its alloys. A broad spectrum of surface characterisation techniques has been used to analyse morphology of the surface and its chemical composition after each of the treatments applied. This allowed us to elaborate a complete set of technological procedures necessary for the fabrication of the efficient GaSb- based photo- and light emitting diodes operating in the midi-infrared wavelength range.
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