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Pierwsze polskie przyrządy półprzewodnikowe : z perspektywy 50 lat

Klamka J.

Elektronika : konstrukcje, technologie, zastosowania

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2006

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Vol. 47, nr 6

40-46

PL

Przedstawiono historię rozwoju pierwszych polskich przyrządów półprzewodnikowych opracowanych przez autora i jego zespół. Dotyczy to głównie diod prostowniczych, diod Zenera, fotodiod oraz różnych przyrządów mikrofalowych (waraktorów, diod lawinowych, diod PIN, diod Gunna, diod Schottky'ego, tranzystorów i podzespołów), wytwarzanych głównie w Pionie Mikrofal Instytutu Technologii Elektronowej.

EN

In the paper, a history of the first semiconductor devices that were designed in Poland by the author and his co-workers, is described. It includes rectifier diodes, Zener diodes, photodiodes and microwave devices (varactors, avalanche diodes, PIN diodes, Gunn diodes, Schottky diodes, transistors and subsystems) - all developed at the Institute of Electron Technology, mainly in the Microwave Division of that Institute.

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Pięciobitowy mikrofalowy przesuwnik fazy z diodami waraktorowymi na pasmo L

Gryglewski D., Morawski T., Zborowska J., Sędek E.

Elektronika : konstrukcje, technologie, zastosowania

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2005

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Vol. 46, nr 11

29-32

PL

Przedstawiono metody projektowania wielostanowych przesuwników fazy z diodami waraktorowymi i sprzęgaczami 3 dB/90° . Pokazano, że można osiągnąć 32 stany pracy przesuwnika o zakresie zmian fazy 360° (32 razy 11,25°) w paśmie częstotliwości o 15% szerokości w prostym przesuwniku składającym się z połączenia dwóch sprzęgaczy z dołączonymi diodami waraktorowymi. Omówiono cyfrowe sterowanie przesuwnika fazy.

EN

Paper presents description of a method for designing 32-state phase shifters comprising varactor diodes and quadrature couplers. It has been shown that it is possible to construct 32-state phase shifter with the 360° range of phase change (11.25° multiplied by 32) in a frequency band 15% wide as a series combination of two couplers connected with varactor diodes. Appropriate digital steering system is also presented, as well as results of measurements of the shifter.

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Evolution and recent advances in RF/microwave transistors

Liou J.J., Schwierz F.

Journal of Telecommunications and Information Technology

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2004

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nr 1

99-105

EN

Most applications for radio frequency/microwave (thereafter called RF) transistors had been military oriented in the early 1980s. Recently, this has been changed drastically due to the explosive growth of the markets for civil wireless communication systems. This paper gives an overview on the evolution, current status, and future trend of transistors used in RF electronic systems. Important background, development and major milestones leading to modern RF transistors are presented. The concept of heterostructure, a feature frequently used in RF transistors, is discussed. The different transistor types and their figures of merit are then addressed. Finally an outlook of expected future developments and applications of RF transistors is given.

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Direct extraction techniques of microwave small-signal model and technological parameters for sub-quarter micron SOI MOSFETs

Goffioul M., Vanhoenacker D., Raskin J.P.

Journal of Telecommunications and Information Technology

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2000

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nr 3-4

59-66

EN

Original extraction techniques of microwave small-signal model and technological parameters for SOI MOSFETs are presented. The characterization method combines careful design of probing and calibration structures, rigorous in situ calibration and a powerful direct extraction method. The proposed characterization procedure is directly based on the physical meaning of each small-signal behavior of each model parameter versus bias conditions, the high frequency equivalent circuit can be simplified for extraction purposes. Biasing MOSFETs under depletion, strong inversion and saturation conditions, certain technological parameters and microwave small-signal elements can be extracted directly from the measured S-parameters. These new extraction techniques allow us to understand deeply the behavior of the sub-quarter micron SOI MOSFETs in microwave domain and to control their fabrication process.

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Comparison of microwave performances for sub-quarter micron fully- and partially-depleted SOI MOSFETs

Goffioul M., Dambrine G., Vanhoenacker D., Raskin J.P.

Journal of Telecommunications and Information Technology

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2000

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nr 3-4

72-80

EN

The high frequency performances including microwave noise parameters for sub-quarter micron fully- (FD and partially-depleted (PD) silicon-on-insulator (SOI) n-MOSFETs are described and compared. Direct extraction techniques based on the physical meaning of each small-signal and noise model element are used to extract the microwave characteristics of various FD and PD SOI n-MOSFETs with different channel lenghts and widths. TiSi2 silicidation process has been demonstrated very efficient to reduce the sheet and contact resistances of gate, source and drain transistor regions. 0.25 žm FD SOI n-MOSFETs with a total gate width of 100 žm present a state-of-the-art minimum noise figure of 0.8 dB and high associated gain of 13 dB at 6 GHz for V(ds) = 0.75 V and P(dc) < 3 mW. A maximum extrapolated oscillation frequency of about 70 GHz has been obtained at V(ds) = 1 V and J(ds) = 100 mA/mm. This new generation of MOSFETs presents very good analogical and digital high speed performances with a low power consumption which make them extremely attractive for high frequency portable applications such as the wireless communications.