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1 Elektronika : konstrukcje, technologie, zastosowania

1 2001

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Badania warstw HfO2 metodą AFM i metodami rentgenowskimi

Ciosek J., Pankowski P., Pełka J. B., Paszkowicz W., Baczewski L. T.

Elektronika : konstrukcje, technologie, zastosowania

2001

Vol. 42, nr 8-9

60-62

Dielectric hafnia layers are used in laser mirrors for UV-IR ranges. They are characterised by unique properties, because except for their good resistively on high-energy laser beam, they also exhibit o low scattering level and low absorption coefficient for radiation from 0,25 u.m to 7 um. The layers were evaporated by PVD method with electron beam (EB) guns. Morphology of the experimental material's layers was studied by X-ray diffraction (XRD) and X-ray reflectometry (GIXR). Their radiation-damage threshold was investigated at wavelength of Nd:YAG laser. The analysis demonstrates a structural difference between HfO2 layers evaporated on the BK7 glass and on melted quartz susbstrates.