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Review on metallic oxide nanoparticles and their application in optoelectronic devices

Sosna-Głębska Aleksandra, Szczecińska Natalia, Znajdek Katarzyna, Sibiński Maciej

Acta Innovations

2019

no. 30

5--15

Among the large family of metallic oxides, there is a considerable group possessing excellent semiconducting properties. What follows, they are promising materials for applications in the field of optoelectronics and photonics. Thanks to the development of nanotechnology in the last few decades, it is now possible to manufacture a great variety of different nanostructures. By controlling their size, shape, composition and crystallinity, one can influence such properties as band gap, absorption properties, surface to volume ratio, conductivity, and, as a consequence, tune the material for the chosen application. The following article reviews the research conducted in the field of application of the metallic oxide nanoparticles, especially ZnO, TiO2 and ITO (Indium-Tin Oxide), in such branches of optoelectronics as solid-state lightning, photodetectors, solar-cells and transparent conducting layers.

The High Temperature Oxidation Stability of STS434L/Silicon Oxide Compacts

Park J. W., Ko B. H., Jung W. Y., Park D. K., Ahn I. S.

Archives of Metallurgy and Materials

2018

Vol. 63, iss. 1

307--313

In order to improve the high-temperature oxidation stability, a study of 434L sintered stainless steel was focused on the effect of addition of metallic oxides to form stable oxide film on the inner particle surface. In this paper, oxidation behavior of 434L compacted parts in accordance with the addition of metallic oxides were discussed with high temperature oxidative reaction, and sintering behavior analysis under 950°C. Oxidation weight gains of 434 L have increased as a form of parabolic laws. The hightemperature oxidation resistance was improved by the mixed addition of amorphous SiO2 and silica up to 2wt.%. The oxidation rate was decreased and kept constant after 60 hours. It was caused by the restraint succeeding oxidation due to the stable oxide formation of Cr2SiO4 phases on the particle surface to prevent densification and inhibition the external diffusion of Cr. High-temperature stability was confirmed by the electrical resistivity maintains the constant value of 1.3×10-2 Ω ·cm when the silica added less than 2w/o to 1w/o A-SiO2 added 434L.

A Study on the Electrical Characteristics and Oxidation Resistance of the STS434L-High Chrome Powder Green Compact at the High-Temperature

Park J. W., Jung W. Y., Park D. K., Ahn I. S.

Archives of Metallurgy and Materials

2018

Vol. 63, iss. 1

431--435

Metallic oxide layer of heat resistant element contributes to the high-temperature oxidation resistance by delaying the oxidation, and also has positive effect on the electrical resistivity increase. In this study, the green compacts of Fe-Cr-Al powder mixed with STS434L were oxidized at 950°C up to 210 hrs in order to consider the effect of metal oxide on the oxidation and electrical resistance. It exhibited the low oxidation resistance in case of 434L only, however it increased as the amount of Fe-Cr-Al powder in the 434L compact. The higher electrical resistivity was observed at the Fe-Cr-Al compact with and 434L powder. The metal oxides of (Fe0.6C0.4)2O3, Cr2O3, and Fe2O3 contributed to the electrical resistivity, whereas Al2O2 took a role of oxidation resistance.