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1 Materials Science Poland

1 2010

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Growth orientation transition and metal-like conductivity of Ti, Al co-doped ZnO films

Jiang M., Liu X., Wang H., Xu J.

Materials Science Poland

2010

Vol. 28, No. 1

273--280

Ti, Al co-doped ZnO thin films have been fabricated by radio frequency magnetron sputtering and post-vacuum-annealing techniques on glass substrates. For annealing temperatures below 723 K, the room temperature resistivity of these films was found to decrease as the annealing temperature increased. The lowest resistivity (6.75×10-4 ?ocm), indicating metal-like conductivity, was found at 723 K. The post-annealing temperature dependent on the resistivity of these films also showed a metal - semiconductor transition at 723 K. It was also found a growth orientation transition of these films from (002) to (100) with the annealing temperature up to 773 K.