In this research work, a Cylindrical Surrounding Double-Gate (CSDG) MOSFET design in a stacked-Dual Metal Gate (DMG) architecture has been proposed to incorporate the ability of gate metal variation in channel field formation. Further, the internal gate's threshold voltage (VTH1) could be reduced compared to the external gate (VTH2) by arranging the gate metal work-function in Double Gate devices. Therefore, a device design of CSDG MOSFET has been realized to instigate the effect of Dual Metal Gate (DMG) stack architecture in the CSDG device. The comparison of device simulation shown optimized electric field and surface potential profile. The gradual decrease of metal work function towards the drain also improves the Drain Induced Barrier Lowering (DIBL) and subthreshold characteristics. The physics-based analysis of gate stack CSDG MOSFET that operates in saturation involving the analogy of cylindrical dual metal gates has been considered to evaluate the performance improvements. The insights obtained from the results using the gate-stack dual metal structure of CSDG are quite promising, which can serve as a guide to further reduce the threshold voltage roll-off, suppress the Hot Carrier Effects (HCEs) and Short Channel Effects (SCEs).
The transition regions of GdSiO/SiOx and HfO2/ SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission electron microscopy (TEM). From measurements of thermally stimulated current (TSC), electron states were found in the transition region of the HfO2/SiOx structures, exhibiting instability attributed to the flexible structural molecular network expected to surround the trap volumes. The investigations were focused especially on whether the trap states belong to an agglomeration consisting of a single charge polarity or of a dipole constellation. We found that flat-band voltage shifts of MOS structures, that reach constant values for increasing oxide thickness, cannot be taken as unique evidence for the existence of dipole layers.
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