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Semiconductor contact layer characterization in a context of hall effect measurements

Kowalewski Andrzej, Wróbel Jarosław, Boguski Jacek, Gorczyca Kinga, Martyniuk Piotr

Metrology and Measurement Systems

2019

Vol. 26, nr 1

109--114

A revision of the standard approach to characterization of thin-semiconductor-layer Hall samples has been proposed. Our results show that simple checking of I(V) curve linearity at room temperature might be insufficient for correct determination of bias conditions of a sample before measurements of Hall effect. It is caused by the nonlinear behaviour of electrical contact layers, which should be treated together with the tested layer a priori as a metal-semiconductor-metal (MSM) structure. Our approach was examined with a Be-doped p-type InAs epitaxial layer, with four gold contacts. Despite using full high-quality photolithography a significant asymmetry in maximum differential resistance (Rd) values and positions relative to zero voltage (or current) value was observed for different contacts. This suggests that such characterization should be performed before each high-precision magneto-transport measurement in order to optimize the bias conditions.

Effects of Ar+ ion sputtering on morphology and electric conductance of 6H-SiC (0001) surface

Mazur P., Zuber S., Grodzicki M., Ciszewski A.

Materials Science Poland

2008

Vol. 26, No. 2

265--269

The paper reports surface modification of SiC by Ar+ ion sputtering. Observations were performed with an ultra high vacuum atomic force microscope operating in the contact mode. The surface morphology and topography were investigated with simultaneous measurement of local changes in electric conductance. We show that the Ar+ ion bombardment of the 6H-SiC wafer surface affects the surface stoichiometry, changing the character of a metal/SiC contact from the Schottky barrier diode type into an ohmic contact type.