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Overview of etching technologies used for HgCdTe

Srivastav V., Pal R., Vyas H. P.

Opto-Electronics Review

2005

Vol. 13, No. 3

197-211

This review is an attempt to survey all the etching techniques that have been used since the very beginning stages of HgCdTe device fabrication to the most recent ones. Recent state of the art device architectures such as high-density focal plane arrays, avalanche photodiodes, two-colour and multispectral detectors require isolation of high aspect ratio trenches with least etch induced damage at the surface and sidewalls. The most widely used dry etching techniques are electron cyclotron resonance plasma and inductively coupled plasma processing. Almost all the etching technologies have been summarized from chemistry and device perspective.