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1 2005

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HBV deep mesa etching in InGaAs/InAlAs/AlAs heterostructures on InP substrate

Górska M., Wrzesińska H., Szerling A., Hejduk K., Ratajczak J., Łysko J.M.

Materials Science Poland

2005

Vol. 23, No. 1

221--226

The chemical composition of newly developed anisotropic etching solution and several experimental results obtained with heterostructure barrier varactor (HBV) deep mesa formation are presented. The novel solution enables the deep etching of the InGaAs/InAlAs/AlAs heterostructure over InP substrate, up to 5 žm in the [100] crystal direction. It ensures etch-stop at the InP substrate and gives almost perfect surface quality, with mesa profiles meeting device design requirements. The etching solution is a mixture of two components: A (H2SO4:H2O2:H2O = 1:1:8) and B (C6H8O7:H2O = 1:1), in the proportion B:(H2O2 content in A) =1:1.