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EN
The Qucs Equation-Defined Device was introduce roughly ten years ago as a versatile behavioural simulation component for modelling the non-linear static and dynamic properties of passive components, semiconductor devices and IC macromodels. Today, this component has become an established element for building experimental device simulation models. It’s inherent interactive properties make it ideal for device and circuit modelling via Qucs schematics. Moreover, Equation-Defined Devices often promote a clearer understanding of the factors involved in the construction of complex compact semiconductor simulation models. This paper is concerned with recent advances in Qucs-S/Ngspice/XSPICE modelling capabilities that improve model construction and simulation run time performance of Equation-Defined Devices using XSPICE model syntheses. To illustrate the new Qucs-S modelling techniques an XSPICE version of the EPFL EKV v2.6 long channel transistor model together with other illustrative examples are described and their performance simulated with Qucs-S and Ngspice.
EN
A high percentage of analogue integrated circuit designs use voltage domain signal processing techniques. Given the fact that integrated circuit current conveyors are high bandwidth current processing devices, often with superior RF performance compared to comparable voltage domain devices, it is surprising that the number of current mode integrated circuits available, as standard of-the-shelf industrial items, is so small. This paper introduces equation-defined device and Verilog-A synthesis approaches to the macromodelling of current conveyor integrated circuits. To illustrate the proposed modelling techniques the properties of a number of modular behavioural level current conveyor macromodel cells are described and their performance compared. The material presented is intended for analogue device modellers and circuit designers who wish to simulate large signal current domain integrated circuit designs. It also demonstrates how synthesized Verilog-A modules can be derived from equation-defined device and conventional subcircuits to form functional, computationally efficient current conveyor macromodels. To illustrate the application of behavioural current conveyor macromodels the design of a six cell CCII+ instrumentation amplifier is introduced and its performance discussed.
EN
This paper is concerned with the development and evaluation of a number of modeling techniques which improve Qucs Harmonic Balance simulation performance of RF compact device models. Although Qucs supports conventional SPICE semiconductor device models, whose static current/voltage and dynamic charge characteristics exhibit second and higher order derivatives may not be continuous, there is no guarantee that these will function without Harmonic Balance simulation convergence problems. The same comment also applies to a number of legacy compact semiconductor device models. The modeling of semiconductor devices centered on non-linear Equation-Defined Devices and blocks of Verilog-A code, combined with linear components, is introduced. These form a class of compact macromodel that has improved Harmonic Balance simulation performance. To illustrate the presented modeling techniques RF diode, BJT and MESFET macromodels are described and their Harmonic Balance performance simulated with Qucs and Xyce©.
4
Content available remote Mathematical models and macromodels of electric power transformers
EN
In the paper different approaches used for creation of electric power transformers are discussed and main types of their mathematical models and macromodels are described. Mathematical model of transformer is created in the hybrid coordinate basis, and macromodel of the power transformer is developed using the "black box" approach in the form of state space equations, the features of such type models usage are analyzed.
PL
W artykule opisano alternatywne podejścia do konstrukcji transformatorów i podstawowe rodzaje ich matematycznych model i makromodeli. Omówiono tworzenie matematycznego model transformatora w hybrydowym układzie współrzędnych i budowę makromodelu w postaci równań stanu z wykorzystaniem podejścia typu "czarna skrzynka". Przedyskutowano własności opracowanych modeli.
5
Content available remote Macromodelling of Electromechanical Systems Components
EN
Methods of macromodelling, which are known as methods of mathematical delineation of dynamic objects, based on information about internal dependencies between their external variables, can be defined as long-range method of scientific researches. These methods are universal and allow automation of corresponding identification procedures. Electromechanical components have their own special features connected with mechanical and electromagnetic processes combined within them, with determined types of nonlinear interdependences between variables, and with marked dispersion of time constants. In the paper a mathematical macromodel in the form of “black box” of asynchronous motor using state variables is proposed. Result of building a macromodel for AC motor of A051A4 type is quite accurate and can be used in analysis of complex systems where this motor is applied.
PL
Systemy elektromechaniczne mają swoją specyfikę związaną z połączeniem w jednym obiekcie zjawisk elektrycznych i mechanicznych. Są one zwykle powiązane między sobą za pomocą zależności nieliniowych. Artykuł porusza problem makromodelowania takiego systemu w postaci silnika indukcyjnego przy wykorzystaniu zmiennych stanu. Stworzono wygodny w użyciu model maszyny indukcyjnej A051A4, który może znaleźć zastosowanie w modelach bardziej złożonych systemów zawierających taki silnik.
PL
W szybko rozwijającej się dziedzinie nanoelektroniki dominujące miejsce zajmują przyrządy półprzewodnikowe jednoelektronowe (ang. Single Electron Devices). W artykule przedstawiono podstawy fizyczne tych przyrządów oraz omówiono niektóre z ich zastosowań, takich jak systemy pamięci o pojemnościach rzędu giga — tera bitów. Zwrócono również uwagę na problemy modelowania i tworzenia makromodeli dla celów CAD.
EN
Single-electron devices in which the addition of a small number of electrons to cm eiectrode can be controlled with one-electron precision by using the charging effed have recently achieved much attention. In the paper a short rewiew of the latest works hi this field has been done. The physical phenomenon of the Coulomb blockade in the quantum dots and islands have been explained. Some esampies of the cwrent-voltage characteristics are demonstrated and the main modeling and macro-modeling problems for CAD discussed.
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