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InAs light-to-heavy hole effective mass ratio determined experimentally from mobility spectrum analysis

Wróbel Jarosław, Umana-Membreno Gilberto A., Boguski Jacek, Złotnik Sebastian, Kowalewski Andrzej, Moszczyński Paweł, Antoszewski Jarek, Faraone Lorenzo, Wróbel Jerzy

Opto-Electronics Review

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2023

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Vol. 31, Special Issue

art. no. e144567

EN

Careful selection of the physical model of the material for a specific doping and selected operating temperatures is a non-trivial task. In numerical simulations that optimize practical devices such as detectors or lasers architecture, this challenge can be very difficult. However, even for such a well-known material as a 5 μm thick layer of indium arsenide on a semiinsulating gallium arsenide substrate, choosing a realistic set of band structure parameters for valence bands is remarkable. Here, the authors test the applicability range of various models of the valence band geometry, using a series of InAs samples with varying levels of p-type doping. Carefully prepared and pretested the van der Pauw geometry samples have been used for magneto-transport data acquisition in the 20-300 K temperature range and magnetic fields up to ±15 T, combined with a mobility spectra analysis. It was shown that in a degenerate statistic regime, temperature trends of mobility for heavy- and light-holes are uncorrelated. It has also been shown that parameters of the valence band effective masses with warping effect inclusion should be used for selected acceptor dopant levels and range of temperatures.

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Magnetotransport measurements as a tool for searching 3D topological insulators

Śliż Paweł, Sankowska Iwona, Bobko Ewa, Szeregij Eugeniusz, Grendysa Jakub, Tomaka Grzegorz, Żak Dariusz, Płoch Dariusz, Jasik Agata

Metrology and Measurement Systems

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2021

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Vol. 28, nr 4

725--734

EN

The paper covers some measurement aspects of transport of electrons through metals and semiconductors in magnetic field - magnetotransport - allowing for the determination of electrical parameters characteristic of three-dimensional (3D) topological insulators (TI) (i.e. those that behave like an insulator inside their volume and have a conductive layer on their surface). A characteristic feature of the 3D TI is also a lack of differences between the chemical composition of the conductive surface and the interior of the material tested and the fact that the electron states for its surface conductivity are topologically protected. In particular, the methods of generating strong magnetic fields, obtaining low temperatures, creating electrical contacts with appropriate geometry were presented, and the measurement methods were reviewed. In addition, the results of magnetotransport measurements obtained for two volumetric samples based on the HgCdTe compound grown with the molecular beam epitaxy method are presented.

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Topological insulators based on the semi-metallic HgCdTe

Tomaka G., Grendysa J., Marchewka M., Śliż P, Becker C. R., Stadler A., Sheregii E. M.

Opto-Electronics Review

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2017

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Vol. 25, No. 3

188--197

EN

The review of peculiarity of growth and experimental results of the magneto-transport measurements (longitudinal magneto-resistance Rxx and the Hall resistance Rxy) over a wide interval of temperatures for several samples of Hg1−xCdxTe (x ≈ 0.13–0.15) grown by MBE is presented in this paper. An amazing temperature stability of the SdH-oscillation period and amplitude is observed in the entire temperature interval of measurements up to 50 K. Moreover, the quantum Hall effect (QHE) behaviour of the Hall resistance was shown in the same temperature interval. These peculiarities of the Rxx and Rxy for strained thin layers are interpreted using quantum Hall conductivity (QHC) on topologically protected surface states (TPSS). In the case of not strained layers it is assumed that the QHC on the TPSS contributes also to the conductance of the bulk samples. The experimental results on magneto-transport (QHC and SdH) obtained for the strained 100 nm thickness Hg1−xCdxTe layer are interpreted on the basis of the 8 × 8 kp model and an advantage of the Hg1−xCdxTe as topological insulators is shown. This article is an expanded version of the scientific reports presented at the International Conference on Semiconductor Nanostructures for Optoelectronics and Biosensors 2016 ICSeNOB2016, May 22–25, 2016, Rzeszow, Poland.

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Kwantowy (2DEG) czujnik pola magnetycznego z pseudomorficzną warstwą aktywną In0,52Al0,48As/In0,8Ga0,2As na podłożu (411)A InP

Przesławski T., Wolkenberg A.

Elektronika : konstrukcje, technologie, zastosowania

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2007

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Vol. 48, nr 1

55-61

PL

Opisano koncepcję nowej generacji czujników Halla wykorzystujących półprzewodnikowe studnie kwantowe wypełnione 2DEG. Technologie MBE, MOCVD umożliwiają kontrolę parametrów rosnących warstw oraz wytwarzanie tzw. struktur pseudomorficznych - mechanicznie naprężonych na granicy z sąsiednimi warstwami i nie przekraczających grubości krytycznej. Podano właściwości elektryczne oraz charakterystyki różnych parametrów, które mogą być odpowiednio kształtowane (inżynieria przerwy zabronionej, inżynieria funkcji falowych). Wymienione zalety tej struktury heterozłączowej w połączeniu ze wzrostem na podłożu (411 )A InP powinny znacznie poprawić właściwości transportowe ładunków elektrycznych. Czujniki Halla wykorzystujące struktury pseudomorficzne mogą w najbliższej przyszłości wyprzeć z wielu zastosowań tradycyjne hallotrony.

EN

There was described new concept of Hall sensors with fulfilled quantum wells by 2DEG. MBE and MOCVD technology allow control of the growing layers (channel and barrier) and therefore also to make pseudomorphic structures mechanic strained on the frontier between neighbor layers and with it thickness lower as critical. It was described different properties and parameters which can be shaped using energy gap and wave function engineering. All values of these structures together with growth on (411)A InP (super- flat interfaces - significant reduction of the interface roughness scattering charge carrier of 2DEG, enhanced electron mobility) must to bring enormous increase of transport parameters of charge carriers. Such Hall sensors can push out in the future the classical Hall sensors with thin layer structure.

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Peculiarities of quantum magnetotransport in In₀.₅₃Ga₀.₄₇As/In₀.₅₂Al₀.₄₈As heterostructures grown on (100) InP

Przesławski T.

Electron Technology : Internet Journal

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2007

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Vol. 39, nr 2

1-3

EN

Magnetotransport properties of the Si δ- doped In₀.₅₃Ga₀.₄₇As/In₀.₅₂Al₀.₄₈As heterostructures grown on (100)InP substrates were investigated by performing classical Van der Pauw Hall effect as well as high field quantum magnetotransport measurements. The results of the conventional Hall measurements are ambiguous because the mobility obtained at liquid helium occurred to be smaller than at room temperature. The qualitative analysis of the conductivity tensor revealed at least two conducting channels. Thus, the properties of whole structure are limited by the low mobility of the parasitic parallel conduction layer. On the other hand, the fast Fourier transform of the quantum magnetooscillations consists of a lot of frequencies. None of them can not be attributed to the presence of the two-dimensional electron gas (2DEG) in a single quantum well. We interpret our rich Fourier spectrum as due to quantum interference (QI) between open electron path commonly found in superlattices structures.