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EN
Theoretical analysis of spin-polarized transport through a ferromagnetic single-electron transistor (FM SET) has been carried out in the sequential tunneling regime. Two external electrodes and the central part (island) of the device are assumed to be ferromagnetic, with the corresponding magnetizations being generally non-collinear. Transport properties of the FM SET are analyzed within the master equation approach, with the respective transition rates determined from the Fermi golden rule. It is assumed that spin relaxation processes on the island are sufficiently fast to neglect spin accumulation. It is shown that electric current and tunnel magnetoresistance (TMR) strongly depend on magnetic configuration of the device. Transport characteristics of symmetrical and asymmetrical structures have been calculated as a function of bias and the gate voltages.
EN
Resonant tunnelling through a non-interacting single-level quantum dot attached to ferromagnetic leads is analysed theoretically. The magnetic moments of the leads are assumed to be non-collinear. Apart from this, an external magnetic field is applied to the system, which is non-collinear with the magnetizations. The magnetic moments of the leads and the external magnetic field are, however, in a common plane. Basic transport characteristics, including current-voltage curves, differential conductance, and tunnel magnetoresistance associated with magnetization rotation, are calculated using the non-equilibrium Green function technique. The dependence of transport characteristics on the bias voltage has been calculated numerically.
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