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Broadband dielectric spectroscopy of Al/Lu2O3/Al thin film sandwiches

Wiktorczyk T.

Materials Science Poland

2009

Vol. 27, No. 4/2

1179--1187

The paper focuses on the dielectric characterization of electron beam deposited lutetium oxide thin films sandwiched between aluminium electrodes. The complex capacitance characteristics were recorded in the frequency domain (from 10 žHz to 10 MHz) with a dielectric response analyser. The influence of the temperature, the insulator thickness and sample ageing on C´(?) and C"(?) characteristics was examined. It was shown that high frequency/low temperature dielectric data are assigned to the volume of lutetium oxide film, whereas the low frequency/high temperature results are connected with M/I interfaces. The width of near electrode regions (Schottky barriers) was estimated (? ? 2.6-4.7 nm).

Broadband dielectric spectroscopy of ALl/Lu2O3/Al thin film sandwiches.

Wiktorczyk T.

Prace Naukowe Instytutu Podstaw Elektrotechniki i Elektrotechnologii Politechniki Wrocławskiej. Konferencje

2007

Vol. 46, nr 19

82-85

The paper focuses on the dielectric characterization of electron-beam deposited lutetium oxide thin films sandwiched between aluminium electrodes. The complex capacitance characteristics were measured in the frequency domain (from 10/xHz to 10MHz) with dielectric response analyser. The influence of the temperature, the insulator thickness and sample aging on C'(u>) and C"((D) characteristics was examined. It was shown that high-frequency/low-temperature dielectric data are assigned to the volume of lutetium oxide film, whereas the low-frequency/high-temperature results are connected with M/I interfaces. The width of near-electrode regions (Schottky barriers) was estimated (k = 2.6-4.7 nm).