Wyniki wyszukiwania - BazTech

1

Design of Low Power Low Voltage Bulk Driven Operational Transconductance Amplifier (BD-OTA)

Shaktour M. A.

Poznan University of Technology Academic Journals. Electrical Engineering

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2014

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No. 80

63--69

EN

Operational Transconductance Amplifier (OTA) is one of the most significant building-blocks in integrated continuous-time filters. Here we design Low Power Low Voltage Bulk Driven OTA with a new concept of high-linearity OTA with controllable Transconductance is proposed. The OTA is simulated in a standard TSMC 0.18 mm CMOS process with a 0.6 V supply voltage.

2

Control Strategies and Digital Simulation of DFIG-based Wind Generators for Transient Stability Studies

Han Y.

Przegląd Elektrotechniczny

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2013

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R. 89, nr 5

43-46

EN

This paper presents the control strategies and digital simulation for the double-fed induction generator (DFIG)-based wind generators for transient stability studies. The wind turbine power tracking characteristics and the power flow mechanism of the DFIG-based wind plant are analyzed. The rotor-side converter (RSC) control, grid-side converter (GSC) control and the pitch angle control scheme are presented based on the phasor model of the DFIG system. The voltage-regulation mode and var-regulation mode are analyzed using control block diagram, and the simulation results of the benchmark system using Matlab/Simulink are presented. The voltage regulation mode and reactive power capabilities are found to be highly effective for low-voltage ride-through (LVRT) capabilities and transient stability enhancement of the DFIG-based wind generators.

PL

W artykule przedstawiono metodę sterowania silnika typu DFIG w zastosowaniu do elektrowni wiatrowej. Analizie poddano charakterystykę turbiny oraz obwodu mocy z maszyną. Zaprezentowano schematy blokowe zastosowanych struktur sterowania. Otrzymane wyniki symulacyjne potwierdziły wysoką skuteczność i stabilność proponowanego algorytmu także przy obniżonym napięciu sieci (LVRT).

3

Transmission electron microscope studies on carbon nanostructured materials

Pawlyta M.

Archives of Materials Science and Engineering

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2013

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Vol. 63, nr 2

58--67

EN

Purpose: Carbon nanostructured materials are important and still not satisfactorily recognised products. Structure can be investigated with sufficient resolution using transmission electron microscopy but main difficulties are connected with low scattering of electrons by carbon atoms and destruction by knock-on damage caused by collisions of high energy electrons with specimen atoms. Design/methodology/approach: Scanning/transmission electron microscopy (S/TEM) deliver a chance to improve the quality of performed investigations. BF, DF and HAADF detectors were applied for various carbon materials: carbon nanotubes, nano-onions, nanodiamonds and graphitized carbon black. Findings: Obtained results confirmed the usefulness of applied microscopy techniques. Research limitations/implications: Sample preparation is crucial for performed investigations. Because of ionization damage caused by collisions of high energy electrons, results obtained with high-voltage TEM have to be analysed with caution, hence low-voltage electron microscopy is strongly recommended. Originality/value: New and not commonly used techniques were applied for carbon nanostructured materials studies. Advantages and disadvantages of them were compared.

4

Implementation of FD SOI CMOS Technology in ITE

Kucharski K., Renaux C., Crahay A., Grabiec P., Grodner M., Bieniek T., Panas A., Sierakowski A., Kłos H., Tomaszewski D., Obrębski D., Marczewski J., Flandre D.

Elektronika : konstrukcje, technologie, zastosowania

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2011

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Vol. 52, nr 3

13-15

EN

In the present paper, the current status of work on the transfer of a fully-depleted silicon-on-insulator (FD SOI) CMOS technology from Université catholique de Louvain (UCL) to Instytut Technologii Elektronowej (ITE) is described. This task is carried out within the TRIADE' FP7 project oriented towards development of analog and digital blocks coupled with sensors for low-volume high-performance applicalions in aeronautics. The paper describes issues and solution methods used for SOI substrate preparation and CMOS technology implementation. The test structures used for technology evaluation are briefly described. The ellipsometric and electrical measurements are presented, and their preliminary results are outlined. Finally, works on design kit implementation and further works related to application of the technology for integrated circuits manufacturing are described.

PL

W prezentowanej pracy opisany został stan prac w zakresie implementacji w Instytucie Technologii Elektronowej (ITE) technologii wytwarzania całkowicie zubożonych układów scalonych i struktur CMOS SOI (FD SOI CMOS) opracowanej oryginalnie w Universite catholiqué de Louvain (UCL). Zadanie to jest wykonywane w ramach projektu badawczego 7 Programu Ramowego DE pod nazwą TRIADE, zorientowanego na opracowanie analogowych i cyfrowych bloków funkcjonalnych połączonych z czujnikami w celu ich zastosowania w aeronautyce. Praca składa się z części przedstawiających problemy i metody ich rozwiązania w poszczególnych fazach przygotowania płytek podłożowych SOI oraz implementacji technologii wytwarzania struktur CMOS. Omówione zostały w skrócie struktury testowe stosowane do oceny technologii, a także wyniki ich pomiarów elipsometrycznych i elektrycznych. Przedstawione zostały także prace nad implementacją pakietu technologicznego (ang. design kit) i dalsze prace ukierunkowane na wytwarzanie układów scalonych w tej technologii.