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EN
Low-frequency noise measurements have long been recognized as a valuable tool in the examination of quality and reliability of metallic interconnections in the microelectronic industry. While characterized by very high sensitivity, low-frequency noise measurements can be extremely time-consuming, especially when tests have to be carried out over an extended temperature range and with high temperature resolutionas it is required by some advanced characterization approaches recently proposed in the literature. In order to address this issue we designed a dedicated system for the characterization of the low-frequency noise produced by a metallic line vs temperature. The system combines high flexibility and automation with excellent background noise levels. Test temperatures range from ambient temperature up to 300°C. Measurements can be completely automated with temperature changing in pre-programmed steps. A ramp temperature mode is also possible that can be used, with proper caution, to virtually obtain a continuous plot of noise parameters vs temperature.
EN
Measurement of low-frequency noise properties of modern electronic components is a very demanding challenge due to the low magnitude of a noise signal and the limit of a dissipated power. In such a case, an ac technique with a lock-in amplifier or the use of a low-noise transformer as the first stage in the signal path are common approaches. A software dual-phase virtual lock-in (VLI) technique has been developed and tested in low-frequency noise studies of electronic components. VLI means that phase-sensitive detection is processed by a software layer rather than by an expensive hardware lock-in amplifier. The VLI method has been tested in exploration of noise in polymer thick-film resistors. Analysis of the obtained noise spectra of voltage fluctuations confirmed that the 1/f noise caused by resistance fluctuations is the dominant one. The calculated value of the parameter describing the noise intensity of a resistive material, C= 1·10−21m3, is consistent with that obtained with the use of a dc method. On the other hand, it has been observed that the spectra of (excitation independent) resistance noise contain a 1/f component whose intensity depends on the excitation frequency. The phenomenon has been explained by means of noise suppression by impedances of the measurement circuit, giving an excellent agreement with the experimental data.
EN
Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
EN
Noise studies of planar thin-film Ni-P resistors made in/on Printed Circuit Boards, both covered with two different types of cladding or uncladded have been described. The resistors have been made of the resistive-conductive-material (Ohmega-Ply©) of 100 Ώ/sq. Noise of the selected pairs of samples has been measured in the DC resistance bridge with a transformer as the first stage in a signal path. 1/f noise caused by resistance fluctuations has been found to be the main noise component. Parameters describing noise properties of the resistors have been calculated and then compared with the parameters of other previously studied thin- and thick-film resistive materials.
EN
A construction of Noise Signal Analyzer dedicated for low-frequency noise parametrization of multi-terminal electronics devices and elements has been described. Virtual instrument concept and FFT-based architecture have been used to develop the instrument. An experiment on noise in RuO2-glass multi-terminal resistors has been performed in room-temperature to test usefulness of the Analyzer. It has been confirmed that the measured noise is of 1/f shape. It has been revealed in further analysis of measurements by the use of second spectra approach that in higher octaves non-Gaussian component appears. The experiment proves that Analyzer significantly extends the range of possible noise analysis of the system in question.
PL
Opisano konstrukcję analizatora szumu niskoczęstotliwościowego w elementach i przyrządach wielokońcówkowych. Wykorzystano architekturę FFT i koncepcję przyrządu wirtualnego. Przeprowadzono eksperyment w temperaturze pokojowej dotyczący pomiaru szumu w wielokońcówkowym rezystorze RuO2+szkło, pokazując przydatność opracowanego analizatora. Potwierdzono, że zaobserwowany szum jest typu 1/f. W widmach drugiego rzędu wykryto składnik niestacjonarny. Eksperyment pokazał, że opracowany analizator znacznie rozszerza zakres możliwej do przeprowadzenia analizy szumu w badanych elementach.
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