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Ultra-low Power FinFET SRAM Cell with Improved Stability Suitable for Low Power Applications

Birla Shilpi

International Journal of Electronics and Telecommunications

2019

Vol. 65, No. 4

603--609

In this paper, a new 11T SRAM cell using FinFET technology has been proposed, the basic component of the cell is the 6T SRAM cell with 4 NMOS access transistors to improve the stability and also makes it a dual port memory cell. The proposed cell uses a header scheme in which one extra PMOS transistor is used which is biased at different voltages to improve the read and write stability thus, helps in reducing the leakage power and active power. The cell shows improvement in RSNM (Read Static Noise Margin) with LP8T by 2.39x at sub-threshold voltage 2.68x with D6T SRAM cell, 5.5x with TG8T. The WSNM (Write Static Noise Margin) and HM (Hold Margin) of the SRAM cell at 0.9V is 306mV and 384mV. At sub-threshold operation also it shows improvement. The Leakage power reduced by 0.125x with LP8T, 0.022x with D6T SRAM cell, TG8T and SE8T. Also, impact of process variation on cell stability is discussed.

A Modified Signal Feed-Through Pulsed Flip-Flop for Low Power Applications

Panahifar E., Hassanzadeh A.

International Journal of Electronics and Telecommunications

2017

Vol. 63, No. 3

241--246

In this paper a modified signal feed-through pulsed flip-flop has been presented for low power applications. Signal feed-through flip-flop uses a pass transistor to feed input data directly to the output. Feed through transistor and feedback signals have been modified for delay, static and dynamic power reduction. HSPICE simulation shows 22% reduction in leakage power and 8% of dynamic power. Delay has been reduced by 14% using TSMC 90nm technology parameters. The proposed pulsed flip-flop has the lowest PDP (Power Delay Product) among other pulsed flip-flops discussed.

Particle Swarm Optimization Algorithm for Leakage Power Reduction in VLSI Circuits

Leela Rani V., Madhavi Latha M.

International Journal of Electronics and Telecommunications

2016

Vol. 62, No. 2

179--186

Leakage power is the dominant source of power dissipation in nanometer technology. As per the International Technology Roadmap for Semiconductors (ITRS) static power dominates dynamic power with the advancement in technology. One of the well-known techniques used for leakage reduction is Input Vector Control (IVC). Due to stacking effect in IVC, it gives less leakage for the Minimum Leakage Vector (MLV) applied at inputs of test circuit. This paper introduces Particle Swarm Optimization (PSO) algorithm to the field of VLSI to find minimum leakage vector. Another optimization algorithm called Genetic algorithm (GA) is also implemented to search MLV and compared with PSO in terms of number of iterations. The proposed approach is validated by simulating few test circuits. Both GA and PSO algorithms are implemented in Verilog HDL and the simulations are carried out using Xilinx 9.2i. From the simulation results it is found that PSO based approach is best in finding MLV compared to Genetic based implementation as PSO technique uses less runtime compared to GA. To the best of the author’s knowledge PSO algorithm is used in IVC technique to optimize power for the first time and it is quite successful in searching MLV.