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4 Optica Applicata

4 2001

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High-performance 980-nm strained-layer InGaAs/GaAs quantum-well lasers

Bugajski M., Regiński K., Mroziewicz B., Kubica J.M., Sajewicz P., Piwoński T., Zbroszczyk M.

Optica Applicata

2001

Vol. 31, nr 2

267-271

Reports fabrication of strained-layer InGaAs/GaAs separate-confinement-heterostructure single-quantum-well (SCH SQW) lasers operating in the wavelength range of 980 nm. Design process of the devices involved simulation of their above-threshold operation including all relevant physical phenomena. The lasers were characterized at room temperature in the pulsed operation regime at frequency v=5 kHz and pulse length tau =200 ns. Threshold current densities of the order J/sub th/=280 A/cm/sup 2/ and differential efficiency eta =0.40 W/A were obtained for devices with cavities of 700 mu m in length and broad contacts of 100 mu m in width

Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. II. The results

Czyszanowski T., Wasiak M., Nakwaski W.

Optica Applicata

2001

Vol. 31, nr 2

325-336

A detailed optical model of complex multi-layered structures of the separate-confinement-heterostructure (SCH) lasers as well as graded-index (GRIN) SCH lasers presented in the first part of the paper is used to discuss some of the possible modifications of their structure to reduce room-temperature thresholds. Recommended design parameters have been found for each structure. Surprisingly, performance of relatively simple SCH lasers is found to be at least comparable with that of much more complex GRIN-SCH lasers.

Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. I. The model

Czyszanowski T., Wasiak M., Nakwaski W.

Optica Applicata

2001

Vol. 31, nr 2

313-323

Some design modifications and optimization of the GaAs/(AlGa)As separate-confinement-heterostructure (SCH) as well as graded-index separate-confinement-heterostructure (GRIN-SCH) semiconductor lasers to reduce their room-temperature (RT) thresholds are discussed. To this end, a detailed optical model of arsenide diode lasers is developed and used to compare the impact of some structure details on RT lasing thresholds. In the model presented in the first part of the paper, both optical gain and losses are modeled rigorously. Optical fields within complex multi-layered structures of the SCH lasers are found using the downhill method. Threshold carrier concentrations are determined from the general balance of radiation gain and losses. As a result of the simulation, recommended basic design parameters for the above structures are deduced in the second part of the paper.

Crucial structure elements of possible nitride vertical-cavity surface-emitting lasers

Nakwaski W., Maćkowiak P.

Optica Applicata

2001

Vol. 31, nr 2

337-349

Problems connected with designing possible nitride vertical-cavity surface-emitting lasers (VCSELs) for their efficient room-temperature (RT) operation are discussed and analyzed. Crucial elements of the VCSEL geometry, i.e. active regions, spacers, DBR mirrors, current and heat-flux paths, substrates as well as contacts, are examined in detail taking into account the latest achievements of the currently available technology. An impact of various structure configurations on threshold properties of the possible RT CW nitride VCSELs is discussed and the most recommended structure details are chosen. A possibility to manufacture efficient nitride VCSELs in a close future is considered and discussed.