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4 Optica Applicata

4 2001

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Spectral phenomena in CO/sub 2/ lasers. A review

Pliński E. F.

Optica Applicata

2001

Vol. 31, nr 3

509-544

The rich spectrum of the CO/sub 2/ molecule is an appreciated advantage of lasers based on the carbon dioxide medium. On the other hand, that specific feature of the CO/sub 2/ molecule brings about many problems. Sometimes it can be a serious obstacle in designing laser devices. The paper gives an overview of the spectral properties of the radiation of different kinds of CO/sub 2/ lasers. Many examples of the spectral phenomena are presented on modern RF excited waveguide, multi-waveguide and slab-waveguide CO/sub 2/ lasers

Operation of arsenide diode lasers at elevated temperatures

Czyszanowski T.

Optica Applicata

2001

Vol. 31, nr 2

301-311

Some design modification and optimisation of the GaAs/(AlGa)As separate-confinement-heterostructure (SCH) as well as the graded-index separate-confinement-heterostructure (GRIN-SCH) semiconductor lasers are discussed to reduce their threshold concentrations at elevated temperatures. A detailed optical model of arsenide lasers is used to compare an impact of some structural details on lasing thresholds at various temperatures. In the analysis, both optical gain and losses are modelled rigorously. It has been demonstrated that operation of the arsenide lasers considered is not changing dramatically at elevated temperatures not exceeding 400 K.

Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. II. The results

Czyszanowski T., Wasiak M., Nakwaski W.

Optica Applicata

2001

Vol. 31, nr 2

325-336

A detailed optical model of complex multi-layered structures of the separate-confinement-heterostructure (SCH) lasers as well as graded-index (GRIN) SCH lasers presented in the first part of the paper is used to discuss some of the possible modifications of their structure to reduce room-temperature thresholds. Recommended design parameters have been found for each structure. Surprisingly, performance of relatively simple SCH lasers is found to be at least comparable with that of much more complex GRIN-SCH lasers.

Design considerations for GaAs/(AlGa)As SCH and GRIN-SCH quantum-well laser structures. I. The model

Czyszanowski T., Wasiak M., Nakwaski W.

Optica Applicata

2001

Vol. 31, nr 2

313-323

Some design modifications and optimization of the GaAs/(AlGa)As separate-confinement-heterostructure (SCH) as well as graded-index separate-confinement-heterostructure (GRIN-SCH) semiconductor lasers to reduce their room-temperature (RT) thresholds are discussed. To this end, a detailed optical model of arsenide diode lasers is developed and used to compare the impact of some structure details on RT lasing thresholds. In the model presented in the first part of the paper, both optical gain and losses are modeled rigorously. Optical fields within complex multi-layered structures of the SCH lasers are found using the downhill method. Threshold carrier concentrations are determined from the general balance of radiation gain and losses. As a result of the simulation, recommended basic design parameters for the above structures are deduced in the second part of the paper.