There exists the problem in diagnostics of dense plasma (so-called Thomson diagnostics). For this purpose the plasma is illuminated by series of high energy laser pulses. The energy of each separate pulse is as large as 3 J, so it is impossible to generate a burst of such pulses by a single laser. In this situation, the pulses are generated by several independent lasers operating sequentially, and these pulses are to be directed along the same optical path. To form an optical path with ʎ = 1.064 μm and absolute value of the laser pulse energy of 3 J, a special refractive index matched twisted Nematic Liquid Crystal Cell of type LCNP3, with switching on time ƮON smaller than 3 μs was applied.
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To study the differences between long-pulse and short-pulse laser-induced damage in optical dielectric thin films, temperature distributions in single-layer HfO2 films, multi-layer HfO2/SiO2 films, and HfO2 films with high-absorptive inclusions induced by 1 ms and 10 ns lasers are analyzed based on the temperature field theory. Through our calculations, the damage property differences between millisecond and nanosecond lasers are summarized. The results for single-layer films show that 1 ms laser is easier to damage the substrate than 10 ns laser. For multi-layer films, the laser field effect is weaker when irradiating by 1 ms laser. Furthermore, when inclusions are introduced, the film is easier to be damaged by 10 ns laser, which means that 10 ns laser is more sensitive to the inclusions.
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