Optically stimulated luminescence (OSL) and thermoluminescence (TL) methods are commonly used in dosimetry of ionizing radiation and dating of archaeological and geological objects. A typical disadvantage of OSL detectors is signal loss over a longer time scale. In this article, we present a method of studying this phenomenon as well as monitoring the state of the detector by means of optical sampling. The method was used to determine the OSL signal loss (fading) characteristics of selected potassium feldspars.
This paper describes the work performed in ITE on integration in one CMOS chip the ionizing radiation detectors with dedicated readout electronics. At the beginning, some realizations of silicon detectors of ionizing radiation are presented together with most important issues related to these devices. Next, two developed test structures for readout electronics are discussed in detail together with main features of non-typical silicon proces deployed.
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