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EN
The authors used a modern quantum theory allowing to determine the energy levels of electrons in real metal. Based on that analytical equations have been presented by means of which the bulk modulus for chosen metals were calculated. It should be emphasized that all values obtained directly from the derived equation are in perfect conformity with the experimental data, a few percentage differences are comparable with the potential measurement error. Subsequently a simple mathematical model has been proposed which allows to calculate the bulk modulus of copper alloys depending on their percentage composition. The authors performed numerical calculations for the typical copper alloys and the results are presented in the form of graphs.
EN
The article uses the analytical equation for the work function of metals, made by one of the authors, to study the structure of aluminum alloys, which are increasingly used in the shipbuilding industry. For example, of selected alloys Al-Cu, Al-Ta and Al-Ti are presented graphically changes in work function depending on the percentage composition of the alloy. Also presented an equation that allows to evaluate the work function for multicomponent alloys.
EN
A simple analytical expression for the work function is derived on the basis of nonlocal potential and the nearest neighbor approximation (NNA). It allows to establish a direct connection between the ionization energy of atoms and their corresponding metallic crystal (work function). In consequence we can determine the screening parameter for alkali metals.
PL
Na podstawie nielokalnego potencjału oraz przybliżenia najbliższego sąsiada (NNA) uzyskujemy proste analityczne wyrażenie na pracę wyjścia. Pozwala ono ustalić bezpośrednią relację pomiędzy energią jonizacji atomu a odpowiadającą jej dla sieci krystalicznej pracą wyjścia. W rezultacie możemy wyznaczyć parametr ekranowania dla metali alkaicznych.
EN
High-resolution photoemission yield spectroscopy (PYS) has been used to study the electronic properties of space charge layer of the real GaAs(100) surface cleaned by atomic hydrogen. The ionization energy, work function and interface Fermi level position were determined as a function of hydrogen dose. Moreover, the evolution of effective density of filled electronic states localized in the band gap and in the upper part of the valence band was observed. Our experiments showed that for the hydrogen dose up to 10 4 L H 2 the contamination etching stage occurs for which the interface Fermi level position E
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