Wyniki wyszukiwania - BazTech

1

Background donor concentration in HgCdTe

Izhnin I. I., Mynbaev K. D., Voitsekhovsky A. V., Korotaev A. G., Fitsych O. I., Pociask-Bialy M., Dvoretsky S. A.

Opto-Electronics Review

|

2015

|

Vol. 23, No. 3

200-207

EN

Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating acceptors. In bulk crystals, films grown with liquid phase epitaxy and films fabricated with molecular beam epitaxy (MBE) on Si substrates, BDC of the order of ~10¹⁴ cm⁻³ was revealed. Films grown with metal-organic chemical vapour deposition and with MBE on GaAs substrates showed BDC of the order of ~10¹⁵ cm⁻³. A possibility of assessing the BDC in acceptor (arsenic)-doped HgCdTe was demonstrated. In general, the studies showed the effectiveness of ion milling as a method of reducing electrical compensation in n-type MCT and as an excellent tool for assisting evaluation of BDC.

2

Defects in HgCdTe grown by molecular beam epitaxy on GaAs substrates

Izhnin I. I., Izhnin A. I., Savytskyy H. V., Fitsych O. I., Mikhailov N. N., Varavin V. S., Dvoretsky S. A., Sidorov Y. G., Mynbaev K. D.

Opto-Electronics Review

|

2012

|

Vol. 20, No. 4

375-378

EN

The Hall effect and photoluminescence measurements combined with annealing and/or ion milling were used to study the electrical and optical properties of HgCdTe films grown by molecular-beam epitaxy on GaAs substrates with ZnTe and CdTe buffer layers. Unintentional donor doping, likely from the substrate, which resulted in residual donor concentration of the order of 10¹⁵ cm⁻³, was observed in the films. Also, acceptor states, possibly related to structural defects, were observed.

3

The study of HgCdTe MBE-grown structure with ion milling

Pociask M. M.

Opto-Electronics Review

|

2010

|

Vol. 18, No. 3

338-341

EN

Of many techniques used to characterize quality of HgCdTe, ion milling is emerging as a unique means to reveal electrically active and neutral defects and complexes. Ion milling is capable of strongly affecting electrical properties of HgCdTe, up to conductivity type conversion in p-type material. It appears, that strongly non-equilibrium processes which take place under ion milling, when material is oversaturated with mercury interstitial atoms generated near a surface, lead to formation of specific defect complexes, which may not form under other type of treatment. By measuring parameters of a crystal before and after milling, and following disintegration of defects with time after ion milling ('relaxation'), one can detect and identify these defects. This method was applied to analyse different samples grown by molecular beam epitaxy.

4

Ion milling-assisted study of defect structure of HgCdTe films grown by liquid phase epitaxy

Izhnin I. I., Denisov I. A., Smirnova N. A., Pociask M., Mynbaev K. D.

Opto-Electronics Review

|

2010

|

Vol. 18, No. 3

328-331

EN

Ion milling, as a tool for ''stirring'' defects in HgCdTe by injecting high concentration of interstitial mercury atoms, was used for studying films grown by liquid phase epitaxy (LPE) on CdZnTe substrates. The films appeared to have very low residual donor concentration (∼10¹⁴ cm⁻³), yet, similar to the material grown by molecular beam epitaxy, contained Te-related neutral defects, which the milling activated electrically. It is shown that ion milling has a stronger effect on HgCdTe defect structure than thermal treatment, and yet eventually brings the material to an ''equilibrium'' state with defect concentration lower than that after low-temperature annealing.