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1 2012

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Multi-step interrupted-growth MBE technology for GaAs/AlGaAs (~9.4 µm) room temperature operating quantum-cascade lasers

Kosiel K., Kubacka-Traczyk J., Sankowska I., Szerling A., Gutowski P., Bugajski M.

Opto-Electronics Review

2012

Vol. 20, No. 3

239-246

In order to adjust the highly controllable and optimum growth conditions, the multi-step interrupted-growth MBE processes were performed to deposit a series of GaAs/Al₀.₄₅Ga₀.₅₅As QCL structures. The additional calibrations of MBE system were carried out during the designed growth interruptions. This solution was combined with a relatively low growth rate of active region layers, in order to suppress the negative effects of elemental flux instabilities. As a result, the fabricated QCL structures have yielded devices operating with peak optical power of ~12 mW at room temperature. That is a better result than was obtained for comparable structures deposited with a growth rate kept constant, and with the only initial calibrations performed just before the epitaxy of the overall structure.